Proximity gettering of Au to ion beam induced defects in silicon

J. Wong-Leung; J. S. Williams; R. G. Elliman; E. Nygren; D. J. Eaglesham; D. C. Jacobson; J. M. Poate

doi:10.1016/0168-583X(94)00494-3

Proximity gettering of Au to ion beam induced defects in silicon

J. Wong-Leung^*, J. S. Williams, R. G. Elliman, E. Nygren, D. J. Eaglesham, D. C. Jacobson, J. M. Poate

^*Corresponding author for this work

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Abstract

Rutherford backscattering and transmission electron microscopy have been used to anlayse Au implanted Si (100) samples containing various types of implantation-induced disorder both before and after annealing. Gettering and precipitation phenomena are observed indicating complex diffusion behaviour and Au-defect interactions. For samples containinkg a subsurface band of internal cavities, almost 100% of implanted Au is gettered to such cavities when annealed at 850°C for 1 h.

Original language	English
Pages (from-to)	253-256
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	96
Issue number	1-2
DOIs	https://doi.org/10.1016/0168-583X(94)00494-3
Publication status	Published - 1 Mar 1995

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abstract = "Rutherford backscattering and transmission electron microscopy have been used to anlayse Au implanted Si (100) samples containing various types of implantation-induced disorder both before and after annealing. Gettering and precipitation phenomena are observed indicating complex diffusion behaviour and Au-defect interactions. For samples containinkg a subsurface band of internal cavities, almost 100% of implanted Au is gettered to such cavities when annealed at 850°C for 1 h.",

author = "J. Wong-Leung and Williams, {J. S.} and Elliman, {R. G.} and E. Nygren and Eaglesham, {D. J.} and Jacobson, {D. C.} and Poate, {J. M.}",

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AU - Wong-Leung, J.

AU - Williams, J. S.

AU - Elliman, R. G.

AU - Nygren, E.

AU - Eaglesham, D. J.

AU - Jacobson, D. C.

AU - Poate, J. M.

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N2 - Rutherford backscattering and transmission electron microscopy have been used to anlayse Au implanted Si (100) samples containing various types of implantation-induced disorder both before and after annealing. Gettering and precipitation phenomena are observed indicating complex diffusion behaviour and Au-defect interactions. For samples containinkg a subsurface band of internal cavities, almost 100% of implanted Au is gettered to such cavities when annealed at 850°C for 1 h.

AB - Rutherford backscattering and transmission electron microscopy have been used to anlayse Au implanted Si (100) samples containing various types of implantation-induced disorder both before and after annealing. Gettering and precipitation phenomena are observed indicating complex diffusion behaviour and Au-defect interactions. For samples containinkg a subsurface band of internal cavities, almost 100% of implanted Au is gettered to such cavities when annealed at 850°C for 1 h.

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JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

ER -

Proximity gettering of Au to ion beam induced defects in silicon

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