Pt nanocrystals formed by ion implantation: A defect-mediated nucleation process

R. Giulian; P. Kluth; L. L. Araujo; D. J. Llewellyn; M. C. Ridgway

doi:10.1063/1.2777165

Pt nanocrystals formed by ion implantation: A defect-mediated nucleation process

R. Giulian^*, P. Kluth, L. L. Araujo, D. J. Llewellyn, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

The influence of ion irradiation of Si O2 on the size of metal nanocrystals (NCs) formed by ion implantation has been investigated. Thin Si O2 films were irradiated with high-energy Ge ions then implanted with Pt ions. Without Ge irradiation, the largest Pt NCs were observed beyond the Pt projected range. With irradiation, Ge-induced structural modification of the Si O2 layer yielded a decrease in Pt NC size with increasing Ge fluence at such depths. A defect-mediated NC nucleation mechanism is proposed and a simple yet effective means of modifying and controlling the Pt NC size is demonstrated.

Original language	English
Article number	093115
Journal	Applied Physics Letters
Volume	91
Issue number	9
DOIs	https://doi.org/10.1063/1.2777165
Publication status	Published - 2007

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abstract = "The influence of ion irradiation of Si O2 on the size of metal nanocrystals (NCs) formed by ion implantation has been investigated. Thin Si O2 films were irradiated with high-energy Ge ions then implanted with Pt ions. Without Ge irradiation, the largest Pt NCs were observed beyond the Pt projected range. With irradiation, Ge-induced structural modification of the Si O2 layer yielded a decrease in Pt NC size with increasing Ge fluence at such depths. A defect-mediated NC nucleation mechanism is proposed and a simple yet effective means of modifying and controlling the Pt NC size is demonstrated.",

author = "R. Giulian and P. Kluth and Araujo, {L. L.} and Llewellyn, {D. J.} and Ridgway, {M. C.}",

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T1 - Pt nanocrystals formed by ion implantation

T2 - A defect-mediated nucleation process

AU - Giulian, R.

AU - Kluth, P.

AU - Araujo, L. L.

AU - Llewellyn, D. J.

AU - Ridgway, M. C.

PY - 2007

Y1 - 2007

N2 - The influence of ion irradiation of Si O2 on the size of metal nanocrystals (NCs) formed by ion implantation has been investigated. Thin Si O2 films were irradiated with high-energy Ge ions then implanted with Pt ions. Without Ge irradiation, the largest Pt NCs were observed beyond the Pt projected range. With irradiation, Ge-induced structural modification of the Si O2 layer yielded a decrease in Pt NC size with increasing Ge fluence at such depths. A defect-mediated NC nucleation mechanism is proposed and a simple yet effective means of modifying and controlling the Pt NC size is demonstrated.

AB - The influence of ion irradiation of Si O2 on the size of metal nanocrystals (NCs) formed by ion implantation has been investigated. Thin Si O2 films were irradiated with high-energy Ge ions then implanted with Pt ions. Without Ge irradiation, the largest Pt NCs were observed beyond the Pt projected range. With irradiation, Ge-induced structural modification of the Si O2 layer yielded a decrease in Pt NC size with increasing Ge fluence at such depths. A defect-mediated NC nucleation mechanism is proposed and a simple yet effective means of modifying and controlling the Pt NC size is demonstrated.

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U2 - 10.1063/1.2777165

DO - 10.1063/1.2777165

M3 - Article

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093115

ER -

Pt nanocrystals formed by ion implantation: A defect-mediated nucleation process

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