TY - JOUR
T1 - Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells
AU - Deenapanray, Prakash N.K.
AU - Fu, L.
AU - Petravic, Mladen
AU - Jagadish, C.
AU - Gong, Bin
AU - Lamb, Robert N.
PY - 2000/11
Y1 - 2000/11
N2 - The use of pulsed anodic oxidation of GaAs for impurity-free quantum well interdiffusion is demonstrated. The GaAs capping layer of a single GaAs/Al0.3Ga0.7 As quantum well structure was oxidized and rapid thermal annealing (RTA) at 900 °C for 60 s was carried out to create atomic interdiffusion. X-ray photoelectron spectroscopy was used to study the anodic oxide both before and after RTA. The defects created in oxidized p-GaAs epitaxial layers were also studied using deep-level transient spectroscopy (DLTS). The possible mechanisms that generate excess gallium vacancies, VGa, during either the anodic oxidation process or RTA to promote interdiffusion of the GaAs/AlGaAs quantum well are discussed.
AB - The use of pulsed anodic oxidation of GaAs for impurity-free quantum well interdiffusion is demonstrated. The GaAs capping layer of a single GaAs/Al0.3Ga0.7 As quantum well structure was oxidized and rapid thermal annealing (RTA) at 900 °C for 60 s was carried out to create atomic interdiffusion. X-ray photoelectron spectroscopy was used to study the anodic oxide both before and after RTA. The defects created in oxidized p-GaAs epitaxial layers were also studied using deep-level transient spectroscopy (DLTS). The possible mechanisms that generate excess gallium vacancies, VGa, during either the anodic oxidation process or RTA to promote interdiffusion of the GaAs/AlGaAs quantum well are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0034321361&partnerID=8YFLogxK
U2 - 10.1002/1096-9918(200011)29:11<754::AID-SIA924>3.0.CO;2-D
DO - 10.1002/1096-9918(200011)29:11<754::AID-SIA924>3.0.CO;2-D
M3 - Article
SN - 0142-2421
VL - 29
SP - 754
EP - 760
JO - Surface and Interface Analysis
JF - Surface and Interface Analysis
IS - 11
ER -