Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells

Prakash N.K. Deenapanray; L. Fu; Mladen Petravic; C. Jagadish; Bin Gong; Robert N. Lamb

doi:10.1002/1096-9918(200011)29:11<754::AID-SIA924>3.0.CO;2-D

Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells

Prakash N.K. Deenapanray
, L. Fu
, Mladen Petravic
, C. Jagadish
, Bin Gong
, Robert N. Lamb

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The use of pulsed anodic oxidation of GaAs for impurity-free quantum well interdiffusion is demonstrated. The GaAs capping layer of a single GaAs/Al_0.3Ga_0.7 As quantum well structure was oxidized and rapid thermal annealing (RTA) at 900 °C for 60 s was carried out to create atomic interdiffusion. X-ray photoelectron spectroscopy was used to study the anodic oxide both before and after RTA. The defects created in oxidized p-GaAs epitaxial layers were also studied using deep-level transient spectroscopy (DLTS). The possible mechanisms that generate excess gallium vacancies, V_Ga, during either the anodic oxidation process or RTA to promote interdiffusion of the GaAs/AlGaAs quantum well are discussed.

Original language	English
Pages (from-to)	754-760
Number of pages	7
Journal	Surface and Interface Analysis
Volume	29
Issue number	11
DOIs	https://doi.org/10.1002/1096-9918(200011)29:11<754::AID-SIA924>3.0.CO;2-D
Publication status	Published - Nov 2000

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10.1002/1096-9918(200011)29:11<754::AID-SIA924>3.0.CO;2-D

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title = "Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells",

abstract = "The use of pulsed anodic oxidation of GaAs for impurity-free quantum well interdiffusion is demonstrated. The GaAs capping layer of a single GaAs/Al0.3Ga0.7 As quantum well structure was oxidized and rapid thermal annealing (RTA) at 900 °C for 60 s was carried out to create atomic interdiffusion. X-ray photoelectron spectroscopy was used to study the anodic oxide both before and after RTA. The defects created in oxidized p-GaAs epitaxial layers were also studied using deep-level transient spectroscopy (DLTS). The possible mechanisms that generate excess gallium vacancies, VGa, during either the anodic oxidation process or RTA to promote interdiffusion of the GaAs/AlGaAs quantum well are discussed.",

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TY - JOUR

T1 - Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells

AU - Deenapanray, Prakash N.K.

AU - Fu, L.

AU - Petravic, Mladen

AU - Jagadish, C.

AU - Gong, Bin

AU - Lamb, Robert N.

PY - 2000/11

Y1 - 2000/11

N2 - The use of pulsed anodic oxidation of GaAs for impurity-free quantum well interdiffusion is demonstrated. The GaAs capping layer of a single GaAs/Al0.3Ga0.7 As quantum well structure was oxidized and rapid thermal annealing (RTA) at 900 °C for 60 s was carried out to create atomic interdiffusion. X-ray photoelectron spectroscopy was used to study the anodic oxide both before and after RTA. The defects created in oxidized p-GaAs epitaxial layers were also studied using deep-level transient spectroscopy (DLTS). The possible mechanisms that generate excess gallium vacancies, VGa, during either the anodic oxidation process or RTA to promote interdiffusion of the GaAs/AlGaAs quantum well are discussed.

AB - The use of pulsed anodic oxidation of GaAs for impurity-free quantum well interdiffusion is demonstrated. The GaAs capping layer of a single GaAs/Al0.3Ga0.7 As quantum well structure was oxidized and rapid thermal annealing (RTA) at 900 °C for 60 s was carried out to create atomic interdiffusion. X-ray photoelectron spectroscopy was used to study the anodic oxide both before and after RTA. The defects created in oxidized p-GaAs epitaxial layers were also studied using deep-level transient spectroscopy (DLTS). The possible mechanisms that generate excess gallium vacancies, VGa, during either the anodic oxidation process or RTA to promote interdiffusion of the GaAs/AlGaAs quantum well are discussed.

UR - https://www.scopus.com/pages/publications/0034321361

U2 - 10.1002/1096-9918(200011)29:11<754::AID-SIA924>3.0.CO;2-D

DO - 10.1002/1096-9918(200011)29:11<754::AID-SIA924>3.0.CO;2-D

M3 - Article

SN - 0142-2421

VL - 29

SP - 754

EP - 760

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 11

ER -

Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells

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