Pulsed laser deposited InGaZnO thin film on silica glass

High purity Ga ₂O ₃, In ₂O ₃, and ZnO powders were weighted at a molar ratio of 1: 8: 1, and then InGaZnO (IGZO) ceramic target was fabricated by conventional solid state reaction method in air. IGZO thin films were subsequently prepared by pulsed laser deposition (PLD) method under different pressures at room temperature. The structural and physical properties of the as-grown films were diagnosed by various tools. It was confirmed that all the films exhibited amorphous structure. With the increase of oxygen pressure from 1.0 Pa to 15.0 Pa, surface roughness of IGZO films increased from 0.60 nm to 1.82 nm. The sample deposited under 10.0 Pa oxygen partial pressure had a maximum carrier mobility of 28.6 cm ²/(V·s), a minimum resistivity of 5.57 × 10 ^{- 4} Ω cm, and a highest carrier concentration of 3.95 × 10 ²⁰ cm ^{- 3}.