Pulsed laser deposited InGaZnO thin film on silica glass

Jiangbo Chen; Li Wang; Xueqiong Su; Rongping Wang

doi:10.1016/j.jnoncrysol.2011.12.039

Pulsed laser deposited InGaZnO thin film on silica glass

Jiangbo Chen, Li Wang^*, Xueqiong Su, Rongping Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

High purity Ga ₂O ₃, In ₂O ₃, and ZnO powders were weighted at a molar ratio of 1: 8: 1, and then InGaZnO (IGZO) ceramic target was fabricated by conventional solid state reaction method in air. IGZO thin films were subsequently prepared by pulsed laser deposition (PLD) method under different pressures at room temperature. The structural and physical properties of the as-grown films were diagnosed by various tools. It was confirmed that all the films exhibited amorphous structure. With the increase of oxygen pressure from 1.0 Pa to 15.0 Pa, surface roughness of IGZO films increased from 0.60 nm to 1.82 nm. The sample deposited under 10.0 Pa oxygen partial pressure had a maximum carrier mobility of 28.6 cm ²/(V·s), a minimum resistivity of 5.57 × 10 ^{- 4} Ω cm, and a highest carrier concentration of 3.95 × 10 ²⁰ cm ^{- 3}.

Original language	English
Pages (from-to)	2466-2469
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	358
Issue number	17
DOIs	https://doi.org/10.1016/j.jnoncrysol.2011.12.039
Publication status	Published - 1 Sept 2012

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10.1016/j.jnoncrysol.2011.12.039

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@article{2773f33817e54fbcbe8665c020dd9049,

title = "Pulsed laser deposited InGaZnO thin film on silica glass",

abstract = "High purity Ga 2O 3, In 2O 3, and ZnO powders were weighted at a molar ratio of 1: 8: 1, and then InGaZnO (IGZO) ceramic target was fabricated by conventional solid state reaction method in air. IGZO thin films were subsequently prepared by pulsed laser deposition (PLD) method under different pressures at room temperature. The structural and physical properties of the as-grown films were diagnosed by various tools. It was confirmed that all the films exhibited amorphous structure. With the increase of oxygen pressure from 1.0 Pa to 15.0 Pa, surface roughness of IGZO films increased from 0.60 nm to 1.82 nm. The sample deposited under 10.0 Pa oxygen partial pressure had a maximum carrier mobility of 28.6 cm 2/(V·s), a minimum resistivity of 5.57 × 10 - 4 Ω cm, and a highest carrier concentration of 3.95 × 10 20 cm - 3.",

keywords = "IGZO, Oxygen vacancy, Pulsed laser deposition, Solid-state reaction",

author = "Jiangbo Chen and Li Wang and Xueqiong Su and Rongping Wang",

year = "2012",

month = sep,

day = "1",

doi = "10.1016/j.jnoncrysol.2011.12.039",

language = "English",

volume = "358",

pages = "2466--2469",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

number = "17",

}

TY - JOUR

T1 - Pulsed laser deposited InGaZnO thin film on silica glass

AU - Chen, Jiangbo

AU - Wang, Li

AU - Su, Xueqiong

AU - Wang, Rongping

PY - 2012/9/1

Y1 - 2012/9/1

N2 - High purity Ga 2O 3, In 2O 3, and ZnO powders were weighted at a molar ratio of 1: 8: 1, and then InGaZnO (IGZO) ceramic target was fabricated by conventional solid state reaction method in air. IGZO thin films were subsequently prepared by pulsed laser deposition (PLD) method under different pressures at room temperature. The structural and physical properties of the as-grown films were diagnosed by various tools. It was confirmed that all the films exhibited amorphous structure. With the increase of oxygen pressure from 1.0 Pa to 15.0 Pa, surface roughness of IGZO films increased from 0.60 nm to 1.82 nm. The sample deposited under 10.0 Pa oxygen partial pressure had a maximum carrier mobility of 28.6 cm 2/(V·s), a minimum resistivity of 5.57 × 10 - 4 Ω cm, and a highest carrier concentration of 3.95 × 10 20 cm - 3.

AB - High purity Ga 2O 3, In 2O 3, and ZnO powders were weighted at a molar ratio of 1: 8: 1, and then InGaZnO (IGZO) ceramic target was fabricated by conventional solid state reaction method in air. IGZO thin films were subsequently prepared by pulsed laser deposition (PLD) method under different pressures at room temperature. The structural and physical properties of the as-grown films were diagnosed by various tools. It was confirmed that all the films exhibited amorphous structure. With the increase of oxygen pressure from 1.0 Pa to 15.0 Pa, surface roughness of IGZO films increased from 0.60 nm to 1.82 nm. The sample deposited under 10.0 Pa oxygen partial pressure had a maximum carrier mobility of 28.6 cm 2/(V·s), a minimum resistivity of 5.57 × 10 - 4 Ω cm, and a highest carrier concentration of 3.95 × 10 20 cm - 3.

KW - IGZO

KW - Oxygen vacancy

KW - Pulsed laser deposition

KW - Solid-state reaction

UR - https://www.scopus.com/pages/publications/84865735258

U2 - 10.1016/j.jnoncrysol.2011.12.039

DO - 10.1016/j.jnoncrysol.2011.12.039

M3 - Article

SN - 0022-3093

VL - 358

SP - 2466

EP - 2469

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 17

ER -

Pulsed laser deposited InGaZnO thin film on silica glass

Abstract

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