Pulsed laser deposited stoichiometric ZnO thin films

Almamun Ashrafi

doi:10.1109/COMMAD.2008.4802079

Pulsed laser deposited stoichiometric ZnO thin films

Almamun Ashrafi^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Room temperature free-exciton emission was observed in stoichiometric ZnO epilayers grown on Al₂O₃ substrates by pulsed laser deposition. Absorption and photoluminescence measurements clearly showed the free- exciton emissions at 3.30∼3.31 eV. This free-exciton recombination results from the high-quality single- crystalline ZnO epilayers. Temperature-dependent excitonic properties revealed the higher thermal stability of stoichiometric ZnO epilayers with the effective phonon energy, electron-phonon interaction and exciton-phonon coupling of 65.2 meV, 0.093 meV/K and 680 meV, respectively. The strong exciton-phonon coupling has been attributed to the high Fröhlich constant due to the strong localization energy in the stoichiometric ZnO epilayers.

Original language	English
Title of host publication	Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Pages	8-11
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2008.4802079
Publication status	Published - 2008
Event	2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia Duration: 28 Jul 2008 → 1 Aug 2008

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Country/Territory	Australia
City	Sydney, NSW
Period	28/07/08 → 1/08/08

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10.1109/COMMAD.2008.4802079

Cite this

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title = "Pulsed laser deposited stoichiometric ZnO thin films",

abstract = "Room temperature free-exciton emission was observed in stoichiometric ZnO epilayers grown on Al2O3 substrates by pulsed laser deposition. Absorption and photoluminescence measurements clearly showed the free- exciton emissions at 3.30∼3.31 eV. This free-exciton recombination results from the high-quality single- crystalline ZnO epilayers. Temperature-dependent excitonic properties revealed the higher thermal stability of stoichiometric ZnO epilayers with the effective phonon energy, electron-phonon interaction and exciton-phonon coupling of 65.2 meV, 0.093 meV/K and 680 meV, respectively. The strong exciton-phonon coupling has been attributed to the high Fr{\"o}hlich constant due to the strong localization energy in the stoichiometric ZnO epilayers.",

keywords = "Exciton-phonon coupling, Free excitons, Lattice dilation, Stoichiometry, ZnO",

author = "Almamun Ashrafi",

year = "2008",

doi = "10.1109/COMMAD.2008.4802079",

language = "English",

isbn = "9781424427178",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "8--11",

booktitle = "Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08",

note = "2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 ; Conference date: 28-07-2008 Through 01-08-2008",

}

Ashrafi, A 2008, Pulsed laser deposited stoichiometric ZnO thin films. in Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08., 4802079, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 8-11, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Sydney, NSW, Australia, 28/07/08. https://doi.org/10.1109/COMMAD.2008.4802079

Pulsed laser deposited stoichiometric ZnO thin films. / Ashrafi, Almamun.
Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 8-11 4802079 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Pulsed laser deposited stoichiometric ZnO thin films

AU - Ashrafi, Almamun

PY - 2008

Y1 - 2008

N2 - Room temperature free-exciton emission was observed in stoichiometric ZnO epilayers grown on Al2O3 substrates by pulsed laser deposition. Absorption and photoluminescence measurements clearly showed the free- exciton emissions at 3.30∼3.31 eV. This free-exciton recombination results from the high-quality single- crystalline ZnO epilayers. Temperature-dependent excitonic properties revealed the higher thermal stability of stoichiometric ZnO epilayers with the effective phonon energy, electron-phonon interaction and exciton-phonon coupling of 65.2 meV, 0.093 meV/K and 680 meV, respectively. The strong exciton-phonon coupling has been attributed to the high Fröhlich constant due to the strong localization energy in the stoichiometric ZnO epilayers.

AB - Room temperature free-exciton emission was observed in stoichiometric ZnO epilayers grown on Al2O3 substrates by pulsed laser deposition. Absorption and photoluminescence measurements clearly showed the free- exciton emissions at 3.30∼3.31 eV. This free-exciton recombination results from the high-quality single- crystalline ZnO epilayers. Temperature-dependent excitonic properties revealed the higher thermal stability of stoichiometric ZnO epilayers with the effective phonon energy, electron-phonon interaction and exciton-phonon coupling of 65.2 meV, 0.093 meV/K and 680 meV, respectively. The strong exciton-phonon coupling has been attributed to the high Fröhlich constant due to the strong localization energy in the stoichiometric ZnO epilayers.

KW - Exciton-phonon coupling

KW - Free excitons

KW - Lattice dilation

KW - Stoichiometry

KW - ZnO

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U2 - 10.1109/COMMAD.2008.4802079

DO - 10.1109/COMMAD.2008.4802079

M3 - Conference contribution

SN - 9781424427178

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 8

EP - 11

BT - Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08

T2 - 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08

Y2 - 28 July 2008 through 1 August 2008

ER -

Pulsed laser deposited stoichiometric ZnO thin films

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