Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field

P. A. Mortemousque, S. Rosenius, G. Pica, D. P. Franke, T. Sekiguchi, A. Truong, M. P. Vlasenko, L. S. Vlasenko, M. S. Brandt, R. G. Elliman, K. M. Itoh

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    5 Citations (Scopus)

    Abstract

    Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors are discussed as the source of effective electric field gradients generating these shifts via quadrupole interaction with the nuclear spins. The experimental results are modeled quantitatively by molecular orbital theory for a coupled pair consisting of a donor and a spin-dependent recombination readout center.

    Original languageEnglish
    Article number494001
    JournalNanotechnology
    Volume27
    Issue number49
    DOIs
    Publication statusPublished - 8 Nov 2016

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