Quality of silica capping layer and its influence on quantum-well intermixing

L. Fu; P. N.K. Deenapanray; H. H. Tan; C. Jagadish; L. V. Dao; M. Gal

doi:10.1063/1.125601

Quality of silica capping layer and its influence on quantum-well intermixing

L. Fu^*, P. N.K. Deenapanray, H. H. Tan, C. Jagadish, L. V. Dao, M. Gal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The quality of spin-on silica films prebaked at different temperatures has been studied using Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and P-etch [HF(40%):HNO₃(70%): H₂O=3:2:60] measurements. Low-temperature photoluminescence (PL) was performed on GaAs/AlGaAs quantum-well (QW) structures encapsulated by the same films. For all the prebaked films, not only the Si-O-Si peaks, but also OH-related peaks were detected in the IR spectra. After annealing at 950°C for 60 s, almost all OH-related peaks disappeared. Spectroscopic ellipsometry modeling and P-etch measurements showed that the porosity of high-temperature (>300°C) baked samples was similar, and was significantly higher than the low-temperature (210°C) baked sample. The same trend was observed in the PL energy shifts from the GaAs/AlGaAs QWs, indicating a direct correlation between the film quality and quantum-well intermixing.

Original language	English
Pages (from-to)	837-839
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	7
DOIs	https://doi.org/10.1063/1.125601
Publication status	Published - 14 Feb 2000

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title = "Quality of silica capping layer and its influence on quantum-well intermixing",

abstract = "The quality of spin-on silica films prebaked at different temperatures has been studied using Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and P-etch [HF(40\%):HNO3(70\%): H2O=3:2:60] measurements. Low-temperature photoluminescence (PL) was performed on GaAs/AlGaAs quantum-well (QW) structures encapsulated by the same films. For all the prebaked films, not only the Si-O-Si peaks, but also OH-related peaks were detected in the IR spectra. After annealing at 950°C for 60 s, almost all OH-related peaks disappeared. Spectroscopic ellipsometry modeling and P-etch measurements showed that the porosity of high-temperature (>300°C) baked samples was similar, and was significantly higher than the low-temperature (210°C) baked sample. The same trend was observed in the PL energy shifts from the GaAs/AlGaAs QWs, indicating a direct correlation between the film quality and quantum-well intermixing.",

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T1 - Quality of silica capping layer and its influence on quantum-well intermixing

AU - Fu, L.

AU - Deenapanray, P. N.K.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Dao, L. V.

AU - Gal, M.

PY - 2000/2/14

Y1 - 2000/2/14

N2 - The quality of spin-on silica films prebaked at different temperatures has been studied using Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and P-etch [HF(40%):HNO3(70%): H2O=3:2:60] measurements. Low-temperature photoluminescence (PL) was performed on GaAs/AlGaAs quantum-well (QW) structures encapsulated by the same films. For all the prebaked films, not only the Si-O-Si peaks, but also OH-related peaks were detected in the IR spectra. After annealing at 950°C for 60 s, almost all OH-related peaks disappeared. Spectroscopic ellipsometry modeling and P-etch measurements showed that the porosity of high-temperature (>300°C) baked samples was similar, and was significantly higher than the low-temperature (210°C) baked sample. The same trend was observed in the PL energy shifts from the GaAs/AlGaAs QWs, indicating a direct correlation between the film quality and quantum-well intermixing.

AB - The quality of spin-on silica films prebaked at different temperatures has been studied using Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and P-etch [HF(40%):HNO3(70%): H2O=3:2:60] measurements. Low-temperature photoluminescence (PL) was performed on GaAs/AlGaAs quantum-well (QW) structures encapsulated by the same films. For all the prebaked films, not only the Si-O-Si peaks, but also OH-related peaks were detected in the IR spectra. After annealing at 950°C for 60 s, almost all OH-related peaks disappeared. Spectroscopic ellipsometry modeling and P-etch measurements showed that the porosity of high-temperature (>300°C) baked samples was similar, and was significantly higher than the low-temperature (210°C) baked sample. The same trend was observed in the PL energy shifts from the GaAs/AlGaAs QWs, indicating a direct correlation between the film quality and quantum-well intermixing.

UR - https://www.scopus.com/pages/publications/0000947904

U2 - 10.1063/1.125601

DO - 10.1063/1.125601

M3 - Article

SN - 0003-6951

VL - 76

SP - 837

EP - 839

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Quality of silica capping layer and its influence on quantum-well intermixing

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