Quantification of the zinc dopant concentration in GaAs nanowires

T. Burgess; S. Du; B. Gault; Q. Gao; H. H. Tan; R. Zheng; C. Jagadish

doi:10.1109/COMMAD.2012.6472350

Quantification of the zinc dopant concentration in GaAs nanowires

T. Burgess^*, S. Du, B. Gault, Q. Gao, H. H. Tan, R. Zheng, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The zinc dopant concentration and distribution in GaAs nanowires is quantified by atom probe tomography. Material deposited radially by a vapour-solid process is shown to have a significantly higher dopant concentration in comparison to the core which grows by the vapour-liquid-solid process. Zinc concentrations of up to 7×10¹⁹ and 5×10²⁰ atoms/cm³ are measured for core and shell materials respectively. Dopant activation is confirmed by electrical characterization which demonstrates an orders of magnitude increase in nanowire conductivity.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	41-42
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472350
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472350

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Burgess, T., Du, S., Gault, B., Gao, Q., Tan, H. H., Zheng, R., & Jagadish, C. (2012). Quantification of the zinc dopant concentration in GaAs nanowires. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 41-42). Article 6472350 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472350

@inproceedings{d1932e5fe6c9415c8781741368a483fd,

title = "Quantification of the zinc dopant concentration in GaAs nanowires",

abstract = "The zinc dopant concentration and distribution in GaAs nanowires is quantified by atom probe tomography. Material deposited radially by a vapour-solid process is shown to have a significantly higher dopant concentration in comparison to the core which grows by the vapour-liquid-solid process. Zinc concentrations of up to 7×1019 and 5×1020 atoms/cm3 are measured for core and shell materials respectively. Dopant activation is confirmed by electrical characterization which demonstrates an orders of magnitude increase in nanowire conductivity.",

author = "T. Burgess and S. Du and B. Gault and Q. Gao and Tan, {H. H.} and R. Zheng and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472350",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "41--42",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Burgess, T, Du, S, Gault, B, Gao, Q, Tan, HH, Zheng, R & Jagadish, C 2012, Quantification of the zinc dopant concentration in GaAs nanowires. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472350, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 41-42, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472350

Quantification of the zinc dopant concentration in GaAs nanowires. / Burgess, T.; Du, S.; Gault, B. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 41-42 6472350 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Quantification of the zinc dopant concentration in GaAs nanowires

AU - Burgess, T.

AU - Du, S.

AU - Gault, B.

AU - Gao, Q.

AU - Tan, H. H.

AU - Zheng, R.

AU - Jagadish, C.

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AB - The zinc dopant concentration and distribution in GaAs nanowires is quantified by atom probe tomography. Material deposited radially by a vapour-solid process is shown to have a significantly higher dopant concentration in comparison to the core which grows by the vapour-liquid-solid process. Zinc concentrations of up to 7×1019 and 5×1020 atoms/cm3 are measured for core and shell materials respectively. Dopant activation is confirmed by electrical characterization which demonstrates an orders of magnitude increase in nanowire conductivity.

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DO - 10.1109/COMMAD.2012.6472350

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 41

EP - 42

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Burgess T, Du S, Gault B, Gao Q, Tan HH, Zheng R et al. Quantification of the zinc dopant concentration in GaAs nanowires. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 41-42. 6472350. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472350

Quantification of the zinc dopant concentration in GaAs nanowires

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