@inproceedings{d1932e5fe6c9415c8781741368a483fd,
title = "Quantification of the zinc dopant concentration in GaAs nanowires",
abstract = "The zinc dopant concentration and distribution in GaAs nanowires is quantified by atom probe tomography. Material deposited radially by a vapour-solid process is shown to have a significantly higher dopant concentration in comparison to the core which grows by the vapour-liquid-solid process. Zinc concentrations of up to 7×1019 and 5×1020 atoms/cm3 are measured for core and shell materials respectively. Dopant activation is confirmed by electrical characterization which demonstrates an orders of magnitude increase in nanowire conductivity.",
author = "T. Burgess and S. Du and B. Gault and Q. Gao and Tan, {H. H.} and R. Zheng and C. Jagadish",
year = "2012",
doi = "10.1109/COMMAD.2012.6472350",
language = "English",
isbn = "9781467330459",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
pages = "41--42",
booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",
note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",
}