Abstract
Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm−2–100 kW cm−2. Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 × 1017 cm−3 and [P] below 8 × 1016 cm−3.
Original language | English |
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Pages (from-to) | 3029-3032 |
Number of pages | 4 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 213 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1 Nov 2016 |