Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

An Yao Liu*, Hieu T. Nguyen, Daniel Macdonald

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm−2–100 kW cm−2. Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 × 1017 cm−3 and [P] below 8 × 1016 cm−3.

    Original languageEnglish
    Pages (from-to)3029-3032
    Number of pages4
    JournalPhysica Status Solidi (A) Applications and Materials Science
    Volume213
    Issue number11
    DOIs
    Publication statusPublished - 1 Nov 2016

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