Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

An Yao Liu; Hieu T. Nguyen; Daniel Macdonald

doi:10.1002/pssa.201600335

Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

An Yao Liu^*, Hieu T. Nguyen, Daniel Macdonald

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm⁻²–100 kW cm⁻². Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 × 10¹⁷ cm⁻³ and [P] below 8 × 10¹⁶ cm⁻³.

Original language	English
Pages (from-to)	3029-3032
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	213
Issue number	11
DOIs	https://doi.org/10.1002/pssa.201600335
Publication status	Published - 1 Nov 2016

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10.1002/pssa.201600335

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title = "Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K",

abstract = "Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm−2–100 kW cm−2. Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 × 1017 cm−3 and [P] below 8 × 1016 cm−3.",

keywords = "photoluminescence spectroscopy, shallow dopant, silicon",

author = "Liu, \{An Yao\} and Nguyen, \{Hieu T.\} and Daniel Macdonald",

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doi = "10.1002/pssa.201600335",

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T1 - Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

AU - Liu, An Yao

AU - Nguyen, Hieu T.

AU - Macdonald, Daniel

PY - 2016/11/1

Y1 - 2016/11/1

N2 - Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm−2–100 kW cm−2. Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 × 1017 cm−3 and [P] below 8 × 1016 cm−3.

AB - Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm−2–100 kW cm−2. Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 × 1017 cm−3 and [P] below 8 × 1016 cm−3.

KW - photoluminescence spectroscopy

KW - shallow dopant

KW - silicon

UR - https://www.scopus.com/pages/publications/84978174470

U2 - 10.1002/pssa.201600335

DO - 10.1002/pssa.201600335

M3 - Article

SN - 1862-6300

VL - 213

SP - 3029

EP - 3032

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 11

ER -

Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

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