Quantitative dopant distributions in GaAs nanowires using atom probe tomography

Sichao Du; Timothy Burgess; Baptiste Gault; Qiang Gao; Peite Bao; Li Li; Xiangyuan Cui; Wai Kong Yeoh; Hongwei Liu; Lan Yao; Anna V. Ceguerra; Hark Hoe Tan; Chennupati Jagadish; Simon P. Ringer; Rongkun Zheng

doi:10.1016/j.ultramic.2013.02.012

Quantitative dopant distributions in GaAs nanowires using atom probe tomography

Sichao Du, Timothy Burgess, Baptiste Gault, Qiang Gao, Peite Bao, Li Li, Xiangyuan Cui, Wai Kong Yeoh, Hongwei Liu, Lan Yao, Anna V. Ceguerra, Hark Hoe Tan, Chennupati Jagadish, Simon P. Ringer, Rongkun Zheng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe tomography to tackle this major challenge. This highly transferrable method is able to analyze the full diameter of a nanowire, with a depth resolution better than 0.17. nm thanks to an advanced reconstruction method exploiting the specimen's crystallography, and an enhanced chemical sensitivity of better than 8-fold increase in the signal-to-noise ratio.

Original language	English
Pages (from-to)	186-192
Number of pages	7
Journal	Ultramicroscopy
Volume	132
DOIs	https://doi.org/10.1016/j.ultramic.2013.02.012
Publication status	Published - Sept 2013

Access to Document

10.1016/j.ultramic.2013.02.012

Cite this

@article{082e8aa7fcd846f88079ab7c3629d566,

title = "Quantitative dopant distributions in GaAs nanowires using atom probe tomography",

abstract = "Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe tomography to tackle this major challenge. This highly transferrable method is able to analyze the full diameter of a nanowire, with a depth resolution better than 0.17. nm thanks to an advanced reconstruction method exploiting the specimen's crystallography, and an enhanced chemical sensitivity of better than 8-fold increase in the signal-to-noise ratio.",

keywords = "Atom probe tomography, Dopants, Nanowires",

author = "Sichao Du and Timothy Burgess and Baptiste Gault and Qiang Gao and Peite Bao and Li Li and Xiangyuan Cui and {Kong Yeoh}, Wai and Hongwei Liu and Lan Yao and Ceguerra, {Anna V.} and {Hoe Tan}, Hark and Chennupati Jagadish and Ringer, {Simon P.} and Rongkun Zheng",

year = "2013",

month = sep,

doi = "10.1016/j.ultramic.2013.02.012",

language = "English",

volume = "132",

pages = "186--192",

journal = "Ultramicroscopy",

issn = "0304-3991",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Quantitative dopant distributions in GaAs nanowires using atom probe tomography

AU - Du, Sichao

AU - Burgess, Timothy

AU - Gault, Baptiste

AU - Gao, Qiang

AU - Bao, Peite

AU - Li, Li

AU - Cui, Xiangyuan

AU - Kong Yeoh, Wai

AU - Liu, Hongwei

AU - Yao, Lan

AU - Ceguerra, Anna V.

AU - Hoe Tan, Hark

AU - Jagadish, Chennupati

AU - Ringer, Simon P.

AU - Zheng, Rongkun

PY - 2013/9

Y1 - 2013/9

N2 - Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe tomography to tackle this major challenge. This highly transferrable method is able to analyze the full diameter of a nanowire, with a depth resolution better than 0.17. nm thanks to an advanced reconstruction method exploiting the specimen's crystallography, and an enhanced chemical sensitivity of better than 8-fold increase in the signal-to-noise ratio.

AB - Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe tomography to tackle this major challenge. This highly transferrable method is able to analyze the full diameter of a nanowire, with a depth resolution better than 0.17. nm thanks to an advanced reconstruction method exploiting the specimen's crystallography, and an enhanced chemical sensitivity of better than 8-fold increase in the signal-to-noise ratio.

KW - Atom probe tomography

KW - Dopants

KW - Nanowires

UR - http://www.scopus.com/inward/record.url?scp=84883748730&partnerID=8YFLogxK

U2 - 10.1016/j.ultramic.2013.02.012

DO - 10.1016/j.ultramic.2013.02.012

M3 - Article

SN - 0304-3991

VL - 132

SP - 186

EP - 192

JO - Ultramicroscopy

JF - Ultramicroscopy

ER -

Quantitative dopant distributions in GaAs nanowires using atom probe tomography

Abstract

Access to Document

Other files and links

Fingerprint

Cite this