Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses

Hong Yi Xu; Ya Nan Guo; Wen Sun; Zhi Ming Liao; Timothy Burgess; Hao Feng Lu; Qiang Gao; Hark Hoe Tan; Chennupati Jagadish; Jin Zou

doi:10.1186/1556-276X-7-589

Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses

Hong Yi Xu, Ya Nan Guo, Wen Sun, Zhi Ming Liao, Timothy Burgess, Hao Feng Lu, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish, Jin Zou^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

In this letter, we quantitatively investigated epitaxial GaAs nanowires catalyzed by thin Au films of different thicknesses on GaAs (111)_Bsubstrates in a metal-organic chemical vapor deposition reactor. Prior to nanowire growth, the de-wetting of Au thin films to form Au nanoparticles on GaAs (111)B in AsH3 ambient at different temperatures is investigated. It is found that with increasing film thickness, the size of the Au nanoparticles increases while the density of the nanoparticles reduces. Furthermore, higher annealing temperature produces larger Au nanoparticles for a fixed film thickness. As expected, the diameters and densities of the as-grown GaAs nanowires catalyzed by these thin Au films reflect these trends.

Original language	English
Article number	589
Pages (from-to)	1-6
Number of pages	6
Journal	Nanoscale Research Letters
Volume	7
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-7-589
Publication status	Published - 24 Oct 2012

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title = "Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses",

abstract = "In this letter, we quantitatively investigated epitaxial GaAs nanowires catalyzed by thin Au films of different thicknesses on GaAs (111)Bsubstrates in a metal-organic chemical vapor deposition reactor. Prior to nanowire growth, the de-wetting of Au thin films to form Au nanoparticles on GaAs (111)B in AsH3 ambient at different temperatures is investigated. It is found that with increasing film thickness, the size of the Au nanoparticles increases while the density of the nanoparticles reduces. Furthermore, higher annealing temperature produces larger Au nanoparticles for a fixed film thickness. As expected, the diameters and densities of the as-grown GaAs nanowires catalyzed by these thin Au films reflect these trends.",

keywords = "Electron microscopy, Epitaxial growth, GaAs nanowires, III-V semiconductor, MOCVD",

author = "Xu, {Hong Yi} and Guo, {Ya Nan} and Wen Sun and Liao, {Zhi Ming} and Timothy Burgess and Lu, {Hao Feng} and Qiang Gao and {Hoe Tan}, Hark and Chennupati Jagadish and Jin Zou",

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doi = "10.1186/1556-276X-7-589",

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T1 - Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses

AU - Xu, Hong Yi

AU - Guo, Ya Nan

AU - Sun, Wen

AU - Liao, Zhi Ming

AU - Burgess, Timothy

AU - Lu, Hao Feng

AU - Gao, Qiang

AU - Hoe Tan, Hark

AU - Jagadish, Chennupati

AU - Zou, Jin

PY - 2012/10/24

Y1 - 2012/10/24

N2 - In this letter, we quantitatively investigated epitaxial GaAs nanowires catalyzed by thin Au films of different thicknesses on GaAs (111)Bsubstrates in a metal-organic chemical vapor deposition reactor. Prior to nanowire growth, the de-wetting of Au thin films to form Au nanoparticles on GaAs (111)B in AsH3 ambient at different temperatures is investigated. It is found that with increasing film thickness, the size of the Au nanoparticles increases while the density of the nanoparticles reduces. Furthermore, higher annealing temperature produces larger Au nanoparticles for a fixed film thickness. As expected, the diameters and densities of the as-grown GaAs nanowires catalyzed by these thin Au films reflect these trends.

AB - In this letter, we quantitatively investigated epitaxial GaAs nanowires catalyzed by thin Au films of different thicknesses on GaAs (111)Bsubstrates in a metal-organic chemical vapor deposition reactor. Prior to nanowire growth, the de-wetting of Au thin films to form Au nanoparticles on GaAs (111)B in AsH3 ambient at different temperatures is investigated. It is found that with increasing film thickness, the size of the Au nanoparticles increases while the density of the nanoparticles reduces. Furthermore, higher annealing temperature produces larger Au nanoparticles for a fixed film thickness. As expected, the diameters and densities of the as-grown GaAs nanowires catalyzed by these thin Au films reflect these trends.

KW - Electron microscopy

KW - Epitaxial growth

KW - GaAs nanowires

KW - III-V semiconductor

KW - MOCVD

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ER -

Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses

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