TY - JOUR
T1 - Quantum and transport mobilities of a two-dimensional electron gas in the presence of the Rashba spin-orbit interaction
AU - Xu, Wen
PY - 2006/2
Y1 - 2006/2
N2 - A systematic theoretical approach is developed to study the electronic and transport properties of a two-dimensional electron gas (2DEG) in the presence of spin-orbit interactions induced by the Rashba effect. The standard random-phase approximation is employed to calculate the screening length caused by electron-electron interaction in different transition channels. The quantum and transport mobilities in different spin branches are evaluated using the momentum-balance equation derived from the Boltzmann equation, in which the electron interactions with both the remote and background impurities are taken into account in an InAlAs/InGaAs heterojunction at low-temperatures.
AB - A systematic theoretical approach is developed to study the electronic and transport properties of a two-dimensional electron gas (2DEG) in the presence of spin-orbit interactions induced by the Rashba effect. The standard random-phase approximation is employed to calculate the screening length caused by electron-electron interaction in different transition channels. The quantum and transport mobilities in different spin branches are evaluated using the momentum-balance equation derived from the Boltzmann equation, in which the electron interactions with both the remote and background impurities are taken into account in an InAlAs/InGaAs heterojunction at low-temperatures.
KW - 2D modeling and simulation
KW - InGaAs/InAlAs HEMT
KW - Polarization charges
KW - Quantum effects
UR - http://www.scopus.com/inward/record.url?scp=33646160600&partnerID=8YFLogxK
UR - https://www.researchgate.net/publication/281729617_Quantum_and_transport_mobilities_of_a_two-dimensional_electron_gas_in_the_presence_of_the_Rashba_spin-orbit_interaction
M3 - Article
SN - 0253-4177
VL - 27
SP - 204
EP - 217
JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
IS - 2
ER -