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Quantum cascade lasers grown on silicon

  • A. N. Baranov
  • , H. Nguyen-Van
  • , Z. Loghmari
  • , L. Cerutti
  • , J. B. Rodriguez
  • , J. Tournet
  • , G. Narcy
  • , G. Boissier
  • , G. Patriarche
  • , M. Bahriz
  • , E. Tournié
  • , R. Teissier

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

We report the first quantum cascade lasers directly grown on a silicon substrate. These lasers are based on the InAs/AlSb material system and exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers operate near 11 μm, the longest emission wavelength of any laser integrated on Si.

Original languageEnglish
Title of host publicationProceedings - International Conference Laser Optics 2018, ICLO 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages135
Number of pages1
ISBN (Print)9781538636121
DOIs
Publication statusPublished - 13 Aug 2018
Externally publishedYes
Event2018 International Conference Laser Optics, ICLO 2018 - St. Petersburg, Russian Federation
Duration: 4 Jun 2018 → 8 Jun 2018

Publication series

NameProceedings - International Conference Laser Optics 2018, ICLO 2018

Conference

Conference2018 International Conference Laser Optics, ICLO 2018
Country/TerritoryRussian Federation
CitySt. Petersburg
Period4/06/18 → 8/06/18

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