Quantum dot-based integrated optoelectronicDevices

S. Mokkapati*, L. Fu, H. H. Tan, C. Jagadish

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Quantum dot-based integrated optoelectronic devices using two different techniques are reported. Selective area epitaxy is used to fabricate a laser integrated with a waveguide while the post-growth technique of impurity free vacancy disordering is used to fabricate multi-color infrared photodetectors.

Original languageEnglish
Title of host publication2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages108-109
Number of pages2
ISBN (Print)1424400783, 9781424400782
DOIs
Publication statusPublished - 2006
Event2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 - Cincinnati, OH, United States
Duration: 17 Jun 200620 Jun 2006

Publication series

Name2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Volume1

Conference

Conference2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Country/TerritoryUnited States
CityCincinnati, OH
Period17/06/0620/06/06

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