Abstract
This paper discusses the growth of In(Ga)As quan tum dots (QDs) and nanowires by metal-organic chemical vapor deposition and their application to optoelectronic devices. The performance characteristics of QD lasers and QD photodetectors as well as the selective area growth of QDs for integrated devices are reported.
Original language | English |
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Pages (from-to) | 1242-1254 |
Number of pages | 13 |
Journal | IEEE Journal of Selected Topics in Quantum Electronics |
Volume | 12 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2006 |