Quantum dots-in-a-well infrared photodetectors grown by MOCVD

Greg Jolley; Lan Fu; H. Hoe Tan; C. Jagadish; N. Vukmirović; P. Harrison

doi:10.1109/ICONN.2006.340642

Quantum dots-in-a-well infrared photodetectors grown by MOCVD

Greg Jolley^*, Lan Fu, H. Hoe Tan, C. Jagadish, N. Vukmirović, P. Harrison

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The performance characteristics of InGaAs/GaAs quantum-dots-in-a-well infrared photodetectors grown by MOCVD are reported. A responsivity of 40mA/W at the peak detectivity of 3.2×10⁹cmHz^1/2/W has been achieved at a temperature of 77K. In an effort to understand the spectral behavior of the characterized devices band structure modeling has been performed.

Original language	English
Title of host publication	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Pages	419-422
Number of pages	4
DOIs	https://doi.org/10.1109/ICONN.2006.340642
Publication status	Published - 2006
Event	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 - Brisbane, Australia Duration: 3 Jul 2006 → 6 Jul 2006

Publication series

Name	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

Conference

Conference	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006
Country/Territory	Australia
City	Brisbane
Period	3/07/06 → 6/07/06

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10.1109/ICONN.2006.340642

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Jolley, G., Fu, L., Tan, H. H., Jagadish, C., Vukmirović, N., & Harrison, P. (2006). Quantum dots-in-a-well infrared photodetectors grown by MOCVD. In Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN (pp. 419-422). Article 4143422 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN). https://doi.org/10.1109/ICONN.2006.340642

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title = "Quantum dots-in-a-well infrared photodetectors grown by MOCVD",

abstract = "The performance characteristics of InGaAs/GaAs quantum-dots-in-a-well infrared photodetectors grown by MOCVD are reported. A responsivity of 40mA/W at the peak detectivity of 3.2×109cmHz1/2/W has been achieved at a temperature of 77K. In an effort to understand the spectral behavior of the characterized devices band structure modeling has been performed.",

keywords = "Metal-organic chemical vapor deposition, Quantum dot in frared photodetector",

author = "Greg Jolley and Lan Fu and Tan, {H. Hoe} and C. Jagadish and N. Vukmirovi{\'c} and P. Harrison",

year = "2006",

doi = "10.1109/ICONN.2006.340642",

language = "English",

isbn = "1424404533",

series = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

pages = "419--422",

booktitle = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

note = "2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 ; Conference date: 03-07-2006 Through 06-07-2006",

}

Jolley, G, Fu, L , Tan, HH , Jagadish, C, Vukmirović, N & Harrison, P 2006, Quantum dots-in-a-well infrared photodetectors grown by MOCVD. in Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN., 4143422, Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, pp. 419-422, 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006, Brisbane, Australia, 3/07/06. https://doi.org/10.1109/ICONN.2006.340642

Quantum dots-in-a-well infrared photodetectors grown by MOCVD. / Jolley, Greg; Fu, Lan ; Tan, H. Hoe et al.
Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. 2006. p. 419-422 4143422 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Quantum dots-in-a-well infrared photodetectors grown by MOCVD

AU - Jolley, Greg

AU - Fu, Lan

AU - Tan, H. Hoe

AU - Jagadish, C.

AU - Vukmirović, N.

AU - Harrison, P.

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AB - The performance characteristics of InGaAs/GaAs quantum-dots-in-a-well infrared photodetectors grown by MOCVD are reported. A responsivity of 40mA/W at the peak detectivity of 3.2×109cmHz1/2/W has been achieved at a temperature of 77K. In an effort to understand the spectral behavior of the characterized devices band structure modeling has been performed.

KW - Metal-organic chemical vapor deposition

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DO - 10.1109/ICONN.2006.340642

M3 - Conference contribution

SN - 1424404533

SN - 9781424404537

T3 - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

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BT - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

T2 - 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006

Y2 - 3 July 2006 through 6 July 2006

ER -

Jolley G, Fu L , Tan HH , Jagadish C, Vukmirović N, Harrison P. Quantum dots-in-a-well infrared photodetectors grown by MOCVD. In Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. 2006. p. 419-422. 4143422. (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN). doi: 10.1109/ICONN.2006.340642

Quantum dots-in-a-well infrared photodetectors grown by MOCVD

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