Abstract
As and H irradiation with subsequent thermal annealing were used to investigate the intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells (QWs). Large photoluminescence (PL) energy shifts were observed in both materials. Due to dynamic annealing in AlGaAs and the presence of Al in the barriers, the InGaAs/AlGaAs samples showed better PL intensities recovery and larger energy shifts than the InGaAs/GaAs samples after both As and H irradiation. Larger energy shifts were obtained for As irradiation at lower doses than when compared to H irradiation. However, at higher doses H irradiation resulted in higher energy shift than As irradiation. Results of the effect of irradiation temperature showed that higher shift could be obtained with increasing temperature for As irradiation at lower doses while for H irradiation, implant temperature had little effect.
| Original language | English |
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| Pages | 355-357 |
| Number of pages | 3 |
| DOIs | |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: 14 Dec 1998 → 16 Dec 1998 |
Conference
| Conference | Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices |
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| City | Perth, WA, Aust |
| Period | 14/12/98 → 16/12/98 |