Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon

Esther Alarcón-Lladó, Sònia Conesa-Boj, Xavier Wallart, Philippe Caroff, Anna Fontcuberta I Morral

    Research output: Contribution to journalArticlepeer-review

    41 Citations (Scopus)

    Abstract

    Thanks to their wide band structure tunability, GaAs1-xSb x nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of their optical and electronic properties. Raman scattering provides information on the vibrational properties of materials, which can be related to the composition and strain. We present a systematic study of the vibrational properties of GaAs1-xSb x nanowires for Sb contents from 0 to 44%, as determined by energy-dispersive x-ray analyses. We find that optical phonons red-shift with increasing Sb content. We explain the shift by alloying effects, including mass disorder, dielectric changes and ionic plasmon coupling. The influence of Sb on the surface optical modes is addressed. Finally, we compare the luminescence yield between GaAs and GaAs1-xSbx, which can be related to a lower surface recombination rate. This work provides a reference for the study of ternary alloys in the form of nanowires, and demonstrates the tunability and high material quality of gold-free ternary antimonide nanowires directly grown on silicon.

    Original languageEnglish
    Article number405707
    JournalNanotechnology
    Volume24
    Issue number40
    DOIs
    Publication statusPublished - 11 Oct 2013

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