Raman study on the phase transformations of the meta-stable phases of Si induced by indentation

B. C. Johnson; N. Stavrias; B. Haberl; Leonardus B.Bayu Aji; J. E. Bradby; J. C. McCallum; J. S. Williams

doi:10.1109/COMMAD.2012.6472374

Raman study on the phase transformations of the meta-stable phases of Si induced by indentation

B. C. Johnson^*, N. Stavrias, B. Haberl, Leonardus B.Bayu Aji, J. E. Bradby, J. C. McCallum, J. S. Williams

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Raman scattering is used to investigate the metastable Si phases formed by indentation. The indent strain, phase distribution and the kinetics of the phase transformations are examined.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	89-90
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472374
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472374

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Johnson, B. C., Stavrias, N., Haberl, B., Aji, L. B. B., Bradby, J. E., McCallum, J. C., & Williams, J. S. (2012). Raman study on the phase transformations of the meta-stable phases of Si induced by indentation. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 89-90). Article 6472374 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472374

@inproceedings{ebb3199fd1d44c848d7efae3547a66c0,

title = "Raman study on the phase transformations of the meta-stable phases of Si induced by indentation",

abstract = "Raman scattering is used to investigate the metastable Si phases formed by indentation. The indent strain, phase distribution and the kinetics of the phase transformations are examined.",

author = "Johnson, {B. C.} and N. Stavrias and B. Haberl and Aji, {Leonardus B.Bayu} and Bradby, {J. E.} and McCallum, {J. C.} and Williams, {J. S.}",

year = "2012",

doi = "10.1109/COMMAD.2012.6472374",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "89--90",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Johnson, BC, Stavrias, N, Haberl, B, Aji, LBB, Bradby, JE, McCallum, JC & Williams, JS 2012, Raman study on the phase transformations of the meta-stable phases of Si induced by indentation. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472374, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 89-90, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472374

Raman study on the phase transformations of the meta-stable phases of Si induced by indentation. / Johnson, B. C.; Stavrias, N.; Haberl, B. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 89-90 6472374 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Raman study on the phase transformations of the meta-stable phases of Si induced by indentation

AU - Johnson, B. C.

AU - Stavrias, N.

AU - Haberl, B.

AU - Aji, Leonardus B.Bayu

AU - Bradby, J. E.

AU - McCallum, J. C.

AU - Williams, J. S.

PY - 2012

Y1 - 2012

N2 - Raman scattering is used to investigate the metastable Si phases formed by indentation. The indent strain, phase distribution and the kinetics of the phase transformations are examined.

AB - Raman scattering is used to investigate the metastable Si phases formed by indentation. The indent strain, phase distribution and the kinetics of the phase transformations are examined.

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U2 - 10.1109/COMMAD.2012.6472374

DO - 10.1109/COMMAD.2012.6472374

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 89

EP - 90

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Johnson BC, Stavrias N, Haberl B, Aji LBB, Bradby JE, McCallum JC et al. Raman study on the phase transformations of the meta-stable phases of Si induced by indentation. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 89-90. 6472374. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472374

Raman study on the phase transformations of the meta-stable phases of Si induced by indentation

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