Range distributions in binary targets

The depth distribution of species implanted to high fluences can be distorted by collision processes such as atomic mixing and range perturbation resulting from stopping power modifications. In the present work, theoretical and computer simulation treatments have been used to study high-fluence depth-profile modification. In the preliminary investigations bismuth implantations into homogeneous and inhomogeneous arsenic-silicon mixtures and arsenic implantations into similar bismuth-silicon mixtures have been considered. The depth distributions of the implanted species were calculated using a theoretical treatment based on Lindhard's stopping criteria and a computer simulation based on the MARLOWE code. Good agreement was obtained for the ranges calculated using the two techniques.