Recent advances in semiconductor nanowire heterostructures

Howard E. Jackson; Leigh M. Smith; Chennupati Jagadish

doi:10.1149/06417.0001ecst

Recent advances in semiconductor nanowire heterostructures

Howard E. Jackson, Leigh M. Smith, Chennupati Jagadish

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We review a selection of recent optical experiments which provide unique characterizations of the energy landscape in semiconductor nanowires, both simple nanowires and more complex semiconductor heterostructures. The optical experiments include the techniques of photoluminescence, time-resolved photoluminescence, photoluminescence excitation spectroscopy, photocurrent spectroscopy, and Raman scattering brought to bear on structures from simple core-shell structures, to axial heterostructures, to core-multiple-shell heterostructures. The physics that is illuminated ranges from localization of excitons in GaAs quantum well tubes, to strain in GaAs/GaP axial heterostructures, to carrier relaxation dynamics in GaAs/AlGaAs core-shell NWs probed by the new technique of transient Rayleigh scattering.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	ECS Transactions
Volume	64
Issue number	17
DOIs	https://doi.org/10.1149/06417.0001ecst
Publication status	Published - 2014
Event	Symposium on State-of-the-Art Program on Compound Semiconductors 56, SOTAPOCS 2014 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 5 Oct 2014 → 9 Oct 2014

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title = "Recent advances in semiconductor nanowire heterostructures",

abstract = "We review a selection of recent optical experiments which provide unique characterizations of the energy landscape in semiconductor nanowires, both simple nanowires and more complex semiconductor heterostructures. The optical experiments include the techniques of photoluminescence, time-resolved photoluminescence, photoluminescence excitation spectroscopy, photocurrent spectroscopy, and Raman scattering brought to bear on structures from simple core-shell structures, to axial heterostructures, to core-multiple-shell heterostructures. The physics that is illuminated ranges from localization of excitons in GaAs quantum well tubes, to strain in GaAs/GaP axial heterostructures, to carrier relaxation dynamics in GaAs/AlGaAs core-shell NWs probed by the new technique of transient Rayleigh scattering.",

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T1 - Recent advances in semiconductor nanowire heterostructures

AU - Jackson, Howard E.

AU - Smith, Leigh M.

AU - Jagadish, Chennupati

N1 - Publisher Copyright: © The Electrochemical Society.

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Y1 - 2014

N2 - We review a selection of recent optical experiments which provide unique characterizations of the energy landscape in semiconductor nanowires, both simple nanowires and more complex semiconductor heterostructures. The optical experiments include the techniques of photoluminescence, time-resolved photoluminescence, photoluminescence excitation spectroscopy, photocurrent spectroscopy, and Raman scattering brought to bear on structures from simple core-shell structures, to axial heterostructures, to core-multiple-shell heterostructures. The physics that is illuminated ranges from localization of excitons in GaAs quantum well tubes, to strain in GaAs/GaP axial heterostructures, to carrier relaxation dynamics in GaAs/AlGaAs core-shell NWs probed by the new technique of transient Rayleigh scattering.

AB - We review a selection of recent optical experiments which provide unique characterizations of the energy landscape in semiconductor nanowires, both simple nanowires and more complex semiconductor heterostructures. The optical experiments include the techniques of photoluminescence, time-resolved photoluminescence, photoluminescence excitation spectroscopy, photocurrent spectroscopy, and Raman scattering brought to bear on structures from simple core-shell structures, to axial heterostructures, to core-multiple-shell heterostructures. The physics that is illuminated ranges from localization of excitons in GaAs quantum well tubes, to strain in GaAs/GaP axial heterostructures, to carrier relaxation dynamics in GaAs/AlGaAs core-shell NWs probed by the new technique of transient Rayleigh scattering.

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VL - 64

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EP - 5

JO - ECS Transactions

JF - ECS Transactions

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T2 - Symposium on State-of-the-Art Program on Compound Semiconductors 56, SOTAPOCS 2014 - 2014 ECS and SMEQ Joint International Meeting

Y2 - 5 October 2014 through 9 October 2014

ER -

Recent advances in semiconductor nanowire heterostructures

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