Recombination activity of iron-boron pairs in compensated p-type silicon

Daniel Macdonald*, An Liu

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)


    Recently, the possible presence of boron-phosphorus pairs in compensated Si has been proposed in order to explain the unexpected behaviour of boron-oxygen defects in this material. These B-P pairs should also lead to an altered recombination activity of Fe-acceptor pairs in compensated Si, since some of the Fe-acceptor pairs would also be bound to P atoms, altering their energy level and carrier capture properties. In this work, we have used carrier lifetime measurements on Fe-implanted compensated Si wafers, containing both B and P, to identify the Fe-acceptor complexes present. The results indicate that FeB pairs dominate these samples, implying that Fe-B-P complexes, and by extension, B-P pairs, are unlikely to be present in significant concentrations.

    Original languageEnglish
    Pages (from-to)2218-2221
    Number of pages4
    JournalPhysica Status Solidi (B): Basic Research
    Issue number9
    Publication statusPublished - Sept 2010


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