TY - JOUR
T1 - Recombination activity of iron-boron pairs in compensated p-type silicon
AU - Macdonald, Daniel
AU - Liu, An
PY - 2010/9
Y1 - 2010/9
N2 - Recently, the possible presence of boron-phosphorus pairs in compensated Si has been proposed in order to explain the unexpected behaviour of boron-oxygen defects in this material. These B-P pairs should also lead to an altered recombination activity of Fe-acceptor pairs in compensated Si, since some of the Fe-acceptor pairs would also be bound to P atoms, altering their energy level and carrier capture properties. In this work, we have used carrier lifetime measurements on Fe-implanted compensated Si wafers, containing both B and P, to identify the Fe-acceptor complexes present. The results indicate that FeB pairs dominate these samples, implying that Fe-B-P complexes, and by extension, B-P pairs, are unlikely to be present in significant concentrations.
AB - Recently, the possible presence of boron-phosphorus pairs in compensated Si has been proposed in order to explain the unexpected behaviour of boron-oxygen defects in this material. These B-P pairs should also lead to an altered recombination activity of Fe-acceptor pairs in compensated Si, since some of the Fe-acceptor pairs would also be bound to P atoms, altering their energy level and carrier capture properties. In this work, we have used carrier lifetime measurements on Fe-implanted compensated Si wafers, containing both B and P, to identify the Fe-acceptor complexes present. The results indicate that FeB pairs dominate these samples, implying that Fe-B-P complexes, and by extension, B-P pairs, are unlikely to be present in significant concentrations.
KW - Impurity levels
KW - P-type silicon
KW - Photoconductivity
KW - Recombination
UR - http://www.scopus.com/inward/record.url?scp=77956609537&partnerID=8YFLogxK
U2 - 10.1002/pssb.201046157
DO - 10.1002/pssb.201046157
M3 - Article
SN - 0370-1972
VL - 247
SP - 2218
EP - 2221
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
IS - 9
ER -