Recombination in n- and p-type silicon emitters contaminated with iron

Daniel Macdonald; Helmut Mäckel; Andrés Cuevas

doi:10.1109/WCPEC.2006.279614

Recombination in n- and p-type silicon emitters contaminated with iron

Daniel Macdonald^*, Helmut Mäckel, Andrés Cuevas

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

7 Citations (Scopus)

Abstract

Crystalline silicon wafers containing deliberately introduced Fe were subject to phosphorus and boron diffusions, in order to examine the effect of gettered Fe on the recombination properties of the diffused emitter regions. For the case of boron diffusions, the presence of gettered Fe caused increased recombination in the emitter region, while for phosphorus diffusions there was no noticeable effect. This occurred despite the fact that the boron diffusions were much less effective at gettering Fe from the wafer. The results can apparently be explained by the reduced recombination activity of the Fe-related centres in n-type silicon compared to p-type.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	952-955
Number of pages	4
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279614
Publication status	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	1

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	7/05/06 → 12/05/06

Access to Document

10.1109/WCPEC.2006.279614

Cite this

Macdonald, D., Mäckel, H., & Cuevas, A. (2006). Recombination in n- and p-type silicon emitters contaminated with iron. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 952-955). Article 4059787 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279614

Macdonald, Daniel ; Mäckel, Helmut ; Cuevas, Andrés. / Recombination in n- and p-type silicon emitters contaminated with iron. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 952-955 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

@inproceedings{e705b144dcfa424191b1f779706cb6f2,

title = "Recombination in n- and p-type silicon emitters contaminated with iron",

abstract = "Crystalline silicon wafers containing deliberately introduced Fe were subject to phosphorus and boron diffusions, in order to examine the effect of gettered Fe on the recombination properties of the diffused emitter regions. For the case of boron diffusions, the presence of gettered Fe caused increased recombination in the emitter region, while for phosphorus diffusions there was no noticeable effect. This occurred despite the fact that the boron diffusions were much less effective at gettering Fe from the wafer. The results can apparently be explained by the reduced recombination activity of the Fe-related centres in n-type silicon compared to p-type.",

author = "Daniel Macdonald and Helmut M{\"a}ckel and Andr{\'e}s Cuevas",

year = "2006",

doi = "10.1109/WCPEC.2006.279614",

language = "English",

isbn = "1424400163",

series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

publisher = "IEEE Computer Society",

pages = "952--955",

booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

address = "United States",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

}

Macdonald, D, Mäckel, H & Cuevas, A 2006, Recombination in n- and p-type silicon emitters contaminated with iron. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059787, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, IEEE Computer Society, pp. 952-955, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 7/05/06. https://doi.org/10.1109/WCPEC.2006.279614

Recombination in n- and p-type silicon emitters contaminated with iron. / Macdonald, Daniel; Mäckel, Helmut; Cuevas, Andrés.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 952-955 4059787 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

TY - GEN

T1 - Recombination in n- and p-type silicon emitters contaminated with iron

AU - Macdonald, Daniel

AU - Mäckel, Helmut

AU - Cuevas, Andrés

PY - 2006

Y1 - 2006

N2 - Crystalline silicon wafers containing deliberately introduced Fe were subject to phosphorus and boron diffusions, in order to examine the effect of gettered Fe on the recombination properties of the diffused emitter regions. For the case of boron diffusions, the presence of gettered Fe caused increased recombination in the emitter region, while for phosphorus diffusions there was no noticeable effect. This occurred despite the fact that the boron diffusions were much less effective at gettering Fe from the wafer. The results can apparently be explained by the reduced recombination activity of the Fe-related centres in n-type silicon compared to p-type.

AB - Crystalline silicon wafers containing deliberately introduced Fe were subject to phosphorus and boron diffusions, in order to examine the effect of gettered Fe on the recombination properties of the diffused emitter regions. For the case of boron diffusions, the presence of gettered Fe caused increased recombination in the emitter region, while for phosphorus diffusions there was no noticeable effect. This occurred despite the fact that the boron diffusions were much less effective at gettering Fe from the wafer. The results can apparently be explained by the reduced recombination activity of the Fe-related centres in n-type silicon compared to p-type.

UR - https://www.scopus.com/pages/publications/41749102166

U2 - 10.1109/WCPEC.2006.279614

DO - 10.1109/WCPEC.2006.279614

M3 - Conference Paper

SN - 1424400163

SN - 9781424400164

T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

SP - 952

EP - 955

BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

PB - IEEE Computer Society

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

ER -

Macdonald D, Mäckel H, Cuevas A. Recombination in n- and p-type silicon emitters contaminated with iron. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 952-955. 4059787. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279614

Recombination in n- and p-type silicon emitters contaminated with iron

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