Recrystallisation of relaxed SiGe alloy layers

P. Kringhøj; R. G. Elliman; M. Fyhn; S. Y. Shiryaev; A. Nylandsted Larsen

doi:10.1016/0168-583X(96)80028-0

Recrystallisation of relaxed SiGe alloy layers

P. Kringhøj^*, R. G. Elliman, M. Fyhn, S. Y. Shiryaev, A. Nylandsted Larsen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Recrystallisation of amorphous Si_1-xGe_x alloy layers has been studied with Rutherford backscattering spectrometry/channelling (RBS/C) and time resolved reflectivity (TRR). Arrhenius behaviour was observed for the crystallisation velocity and the corresponding activation energy was extracted over the complete composition range (x = 0.0 to x = 1.0). Contrary to expectations, the activation energy did not exhibit a monotonic dependence on Ge concentration but was found to increase above that of Si for Ge concentrations in the range from x ∼ 0.10 to ∼ 0.40. The observed increase in activation energy is explained by an energy term caused by the difference in the actual bond-length and the natural bond-length.

Original language	English
Pages (from-to)	346-349
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	106
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(96)80028-0
Publication status	Published - 2 Dec 1995

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10.1016/0168-583X(96)80028-0

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title = "Recrystallisation of relaxed SiGe alloy layers",

abstract = "Recrystallisation of amorphous Si1-xGex alloy layers has been studied with Rutherford backscattering spectrometry/channelling (RBS/C) and time resolved reflectivity (TRR). Arrhenius behaviour was observed for the crystallisation velocity and the corresponding activation energy was extracted over the complete composition range (x = 0.0 to x = 1.0). Contrary to expectations, the activation energy did not exhibit a monotonic dependence on Ge concentration but was found to increase above that of Si for Ge concentrations in the range from x ∼ 0.10 to ∼ 0.40. The observed increase in activation energy is explained by an energy term caused by the difference in the actual bond-length and the natural bond-length.",

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T1 - Recrystallisation of relaxed SiGe alloy layers

AU - Kringhøj, P.

AU - Elliman, R. G.

AU - Fyhn, M.

AU - Shiryaev, S. Y.

AU - Nylandsted Larsen, A.

PY - 1995/12/2

Y1 - 1995/12/2

N2 - Recrystallisation of amorphous Si1-xGex alloy layers has been studied with Rutherford backscattering spectrometry/channelling (RBS/C) and time resolved reflectivity (TRR). Arrhenius behaviour was observed for the crystallisation velocity and the corresponding activation energy was extracted over the complete composition range (x = 0.0 to x = 1.0). Contrary to expectations, the activation energy did not exhibit a monotonic dependence on Ge concentration but was found to increase above that of Si for Ge concentrations in the range from x ∼ 0.10 to ∼ 0.40. The observed increase in activation energy is explained by an energy term caused by the difference in the actual bond-length and the natural bond-length.

AB - Recrystallisation of amorphous Si1-xGex alloy layers has been studied with Rutherford backscattering spectrometry/channelling (RBS/C) and time resolved reflectivity (TRR). Arrhenius behaviour was observed for the crystallisation velocity and the corresponding activation energy was extracted over the complete composition range (x = 0.0 to x = 1.0). Contrary to expectations, the activation energy did not exhibit a monotonic dependence on Ge concentration but was found to increase above that of Si for Ge concentrations in the range from x ∼ 0.10 to ∼ 0.40. The observed increase in activation energy is explained by an energy term caused by the difference in the actual bond-length and the natural bond-length.

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DO - 10.1016/0168-583X(96)80028-0

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SN - 0168-583X

VL - 106

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Recrystallisation of relaxed SiGe alloy layers

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