Redistribution of boron in silicon after Ne⁺ postirradiation and thermal annealing

Silicon wafers were implanted with 200 keV B⁺ ions up to 5 × 10¹⁴ cm^-2 fluence, then postirradiated with 75-650 keV Ne⁺ ions at different fluences up to a near-constant damage level, and finally furnace annealed up to 500°C. The change in the boron depth distribution at each step is recorded by means of neutron depth profiling, and compared with theoretical simulations. It turns out that the postirradiation releases the majority of all boron atoms from their initial implantation sites already at ambient temperature and quite low fluence, whereas subsequent thermal annealing is of minor importance. The diffusion coefficient of the boron radiation enhanced mobility is found to decrease steadily with increasing postirradiation fluence. These new data are compared with other results from literature.