Reduced threshold current in NbO2selector by engineering device structure

Xinjun Liu*, Sanjoy Kumar Nandi, Dinesh Kumar Venkatachalam, Kidane Belay, Sannian Song, Robert Glen Elliman

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    55 Citations (Scopus)

    Abstract

    The leakage current scaling issues for NbO2 selector devices are investigated. By introducing a rough Pt bottom electrode (BE) (RMS roughness ∼2.5 nm) and inserting a 20-nm-thick dielectric layer (Nb2O5 and HfO2) between the BE and NbO2 layer, we show that the threshold current for the insulator-metal-transition in microscale devices (∼150 μm) can be reduced to ∼20 μA, close to that realized in nanoscale (∼10 nm) 3-D vertical ReRAM. This could be attributed to a thermal confinement effect caused by the presence of a permanent conductive filament in dielectric layer. The experimental results are supported by finite element simulation.

    Original languageEnglish
    Article number6878476
    Pages (from-to)1055-1057
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume35
    Issue number10
    DOIs
    Publication statusPublished - 1 Oct 2014

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