Abstract
The leakage current scaling issues for NbO2 selector devices are investigated. By introducing a rough Pt bottom electrode (BE) (RMS roughness ∼2.5 nm) and inserting a 20-nm-thick dielectric layer (Nb2O5 and HfO2) between the BE and NbO2 layer, we show that the threshold current for the insulator-metal-transition in microscale devices (∼150 μm) can be reduced to ∼20 μA, close to that realized in nanoscale (∼10 nm) 3-D vertical ReRAM. This could be attributed to a thermal confinement effect caused by the presence of a permanent conductive filament in dielectric layer. The experimental results are supported by finite element simulation.
Original language | English |
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Article number | 6878476 |
Pages (from-to) | 1055-1057 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 35 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1 Oct 2014 |