Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation

W. Shan; K. M. Yu; W. Walukiewicz; J. W. Ager; E. E. Haller; M. C. Ridgway

doi:10.1063/1.124951

Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N⁺ implantation

W. Shan^*, K. M. Yu, W. Walukiewicz, J. W. Ager, E. E. Haller, M. C. Ridgway

^*Corresponding author for this work

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91 Citations (Scopus)

Abstract

The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N⁺ implantation dosage, the fundamental band-gap energy decreases.

Original language	English
Pages (from-to)	1410-1412
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	10
DOIs	https://doi.org/10.1063/1.124951
Publication status	Published - 6 Sept 1999

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@article{6681b73e04594648b8bc2cdccc0c61e6,

title = "Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation",

abstract = "The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.",

author = "W. Shan and Yu, {K. M.} and W. Walukiewicz and Ager, {J. W.} and Haller, {E. E.} and Ridgway, {M. C.}",

year = "1999",

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AU - Shan, W.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Ager, J. W.

AU - Haller, E. E.

AU - Ridgway, M. C.

PY - 1999/9/6

Y1 - 1999/9/6

N2 - The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.

AB - The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.

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U2 - 10.1063/1.124951

DO - 10.1063/1.124951

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SP - 1410

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N⁺ implantation

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