Refractive index profiles of Ge-doped optical fibers with nanometer spatial resolution using atomic force microscopy

P. Pace*, S. T. Huntington, K. Lyytikãinen, A. Roberts, J. D. Love

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    23 Citations (Scopus)

    Abstract

    We show a quantitative connection between Refractive Index Profiles (RIP) and measurements made by an Atomic Force Microscope (AFM). Germanium doped fibers were chemically etched in hydrofluoric acid solution (HF) and the wet etching characteristics of germanium were studied using an AFM. The AFM profiles were compared to both a concentration profile of the preform determined using a Scanning Electron Microscope (SEM) and a RIP of the fiber measured using a commercial profiling instrument, and were found to be in excellent agreement. It is now possible to calculate the RIP of a germanium doped fiber directly from an AFM profile.

    Original languageEnglish
    Pages (from-to)1452-1457
    Number of pages6
    JournalOptics Express
    Volume12
    Issue number7
    DOIs
    Publication statusPublished - Apr 2004

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