Abstract
Ge implanted with 1 MeV Si+ at a dose of 1 × 10 15 cm-2 creates a buried amorphous layer that, upon regrowth, exhibits several forms of defects-end-of-range (EOR), regrowth-related, and clamshell defects. Unlike Si, no planar {311} defects are observed. The minimal EOR defects are small dotlike defects and are very unstable, dissolving between 450 and 550°C. This is in contrast to Si, where the EOR defects are very stable. The amorphous layer results in both regrowth-related defects and clamshell defects, which were more stable than the EOR damage.
Original language | English |
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Article number | 132114 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 13 |
DOIs | |
Publication status | Published - 2007 |