Regrowth-related defect formation and evolution in 1 MeV amorphized (001) Ge

D. P. Hickey*, Z. L. Bryan, K. S. Jones, R. G. Elliman, E. E. Haller

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    20 Citations (Scopus)

    Abstract

    Ge implanted with 1 MeV Si+ at a dose of 1 × 10 15 cm-2 creates a buried amorphous layer that, upon regrowth, exhibits several forms of defects-end-of-range (EOR), regrowth-related, and clamshell defects. Unlike Si, no planar {311} defects are observed. The minimal EOR defects are small dotlike defects and are very unstable, dissolving between 450 and 550°C. This is in contrast to Si, where the EOR defects are very stable. The amorphous layer results in both regrowth-related defects and clamshell defects, which were more stable than the EOR damage.

    Original languageEnglish
    Article number132114
    JournalApplied Physics Letters
    Volume90
    Issue number13
    DOIs
    Publication statusPublished - 2007

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