Removal of hydrogen and deposition of surface charge during rapid thermal annealing

Teng C. Kho; Keith R. McIntosh; Jason T. Tan; Andrew F. Thomson; Florence W. Chen

doi:10.1109/PVSC.2008.4922678

Removal of hydrogen and deposition of surface charge during rapid thermal annealing

Teng C. Kho, Keith R. McIntosh, Jason T. Tan, Andrew F. Thomson, Florence W. Chen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

The submission of a hydrogenated oxide-passivated silicon wafer to a rapid thermal anneal (RTA) leads to a complicated change in effective lifetime τ_eff. Within seconds, τ_eff decreases rapidly before increasing to near its initial level, and then decreasing more slowly. The initial decline is shown to be due to hydrogen loss from the SiO₂ - Si interface, as is consistent with the literature. The recovery in τ_eff is due to the deposition of surface charge, somehow related to the placement of the sample on an as-cut silicon baseplate within the RTA chamber; this surface charge can be removed by washing the sample in isopropanol. The mechanism behind the final decrease in lifetime is unknown.

Original language	English
Title of host publication	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs	https://doi.org/10.1109/PVSC.2008.4922678
Publication status	Published - 2008
Event	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: 11 May 2008 → 16 May 2008

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Country/Territory	United States
City	San Diego, CA
Period	11/05/08 → 16/05/08

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10.1109/PVSC.2008.4922678

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title = "Removal of hydrogen and deposition of surface charge during rapid thermal annealing",

abstract = "The submission of a hydrogenated oxide-passivated silicon wafer to a rapid thermal anneal (RTA) leads to a complicated change in effective lifetime τeff. Within seconds, τeff decreases rapidly before increasing to near its initial level, and then decreasing more slowly. The initial decline is shown to be due to hydrogen loss from the SiO2 - Si interface, as is consistent with the literature. The recovery in τeff is due to the deposition of surface charge, somehow related to the placement of the sample on an as-cut silicon baseplate within the RTA chamber; this surface charge can be removed by washing the sample in isopropanol. The mechanism behind the final decrease in lifetime is unknown.",

author = "Kho, {Teng C.} and McIntosh, {Keith R.} and Tan, {Jason T.} and Thomson, {Andrew F.} and Chen, {Florence W.}",

year = "2008",

doi = "10.1109/PVSC.2008.4922678",

language = "English",

isbn = "9781424416417",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

booktitle = "33rd IEEE Photovoltaic Specialists Conference, PVSC 2008",

note = "33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 ; Conference date: 11-05-2008 Through 16-05-2008",

}

Kho, TC, McIntosh, KR, Tan, JT, Thomson, AF & Chen, FW 2008, Removal of hydrogen and deposition of surface charge during rapid thermal annealing. in 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008., 4922678, Conference Record of the IEEE Photovoltaic Specialists Conference, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 11/05/08. https://doi.org/10.1109/PVSC.2008.4922678

Removal of hydrogen and deposition of surface charge during rapid thermal annealing. / Kho, Teng C.; McIntosh, Keith R.; Tan, Jason T. et al.
33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922678 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Removal of hydrogen and deposition of surface charge during rapid thermal annealing

AU - Kho, Teng C.

AU - McIntosh, Keith R.

AU - Tan, Jason T.

AU - Thomson, Andrew F.

AU - Chen, Florence W.

PY - 2008

Y1 - 2008

N2 - The submission of a hydrogenated oxide-passivated silicon wafer to a rapid thermal anneal (RTA) leads to a complicated change in effective lifetime τeff. Within seconds, τeff decreases rapidly before increasing to near its initial level, and then decreasing more slowly. The initial decline is shown to be due to hydrogen loss from the SiO2 - Si interface, as is consistent with the literature. The recovery in τeff is due to the deposition of surface charge, somehow related to the placement of the sample on an as-cut silicon baseplate within the RTA chamber; this surface charge can be removed by washing the sample in isopropanol. The mechanism behind the final decrease in lifetime is unknown.

AB - The submission of a hydrogenated oxide-passivated silicon wafer to a rapid thermal anneal (RTA) leads to a complicated change in effective lifetime τeff. Within seconds, τeff decreases rapidly before increasing to near its initial level, and then decreasing more slowly. The initial decline is shown to be due to hydrogen loss from the SiO2 - Si interface, as is consistent with the literature. The recovery in τeff is due to the deposition of surface charge, somehow related to the placement of the sample on an as-cut silicon baseplate within the RTA chamber; this surface charge can be removed by washing the sample in isopropanol. The mechanism behind the final decrease in lifetime is unknown.

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U2 - 10.1109/PVSC.2008.4922678

DO - 10.1109/PVSC.2008.4922678

M3 - Conference contribution

SN - 9781424416417

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008

T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008

Y2 - 11 May 2008 through 16 May 2008

ER -

Removal of hydrogen and deposition of surface charge during rapid thermal annealing

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