Resistance switching in polycrystalline NiOx thin film

Tae Hyun Kim; Muhammad N. Saleh; Sung Kim; Dinesh K. Venkatachalam; Kidane Belay; Andrew Burgess; Stephan Strumpp; Robert G. Elliman

doi:10.1109/COMMAD.2010.5699751

Resistance switching in polycrystalline NiO_x thin film

Tae Hyun Kim, Muhammad N. Saleh, Sung Kim, Dinesh K. Venkatachalam, Kidane Belay, Andrew Burgess, Stephan Strumpp, Robert G. Elliman

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

Resistive switching properties of polycrystalline NiO_x dielectric films are investigated utilizing thermo-chemical model in which a field-induced conductive filament is formed and broken by joule heating.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	223-224
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699751
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

Access to Document

10.1109/COMMAD.2010.5699751

Cite this

Kim, T. H., Saleh, M. N., Kim, S., Venkatachalam, D. K., Belay, K., Burgess, A., Strumpp, S., & Elliman, R. G. (2010). Resistance switching in polycrystalline NiO_x thin film. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 223-224). Article 5699751 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699751

@inproceedings{a5d3003a4d704919bb48366ce094fe7f,

title = "Resistance switching in polycrystalline NiOx thin film",

abstract = "Resistive switching properties of polycrystalline NiOx dielectric films are investigated utilizing thermo-chemical model in which a field-induced conductive filament is formed and broken by joule heating.",

author = "Kim, \{Tae Hyun\} and Saleh, \{Muhammad N.\} and Sung Kim and Venkatachalam, \{Dinesh K.\} and Kidane Belay and Andrew Burgess and Stephan Strumpp and Elliman, \{Robert G.\}",

year = "2010",

doi = "10.1109/COMMAD.2010.5699751",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "223--224",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Kim, TH, Saleh, MN, Kim, S, Venkatachalam, DK, Belay, K, Burgess, A, Strumpp, S & Elliman, RG 2010, Resistance switching in polycrystalline NiO_x thin film. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699751, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 223-224, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699751

Resistance switching in polycrystalline NiO_x thin film. / Kim, Tae Hyun; Saleh, Muhammad N.; Kim, Sung et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 223-224 5699751 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

TY - GEN

T1 - Resistance switching in polycrystalline NiOx thin film

AU - Kim, Tae Hyun

AU - Saleh, Muhammad N.

AU - Kim, Sung

AU - Venkatachalam, Dinesh K.

AU - Belay, Kidane

AU - Burgess, Andrew

AU - Strumpp, Stephan

AU - Elliman, Robert G.

PY - 2010

Y1 - 2010

N2 - Resistive switching properties of polycrystalline NiOx dielectric films are investigated utilizing thermo-chemical model in which a field-induced conductive filament is formed and broken by joule heating.

AB - Resistive switching properties of polycrystalline NiOx dielectric films are investigated utilizing thermo-chemical model in which a field-induced conductive filament is formed and broken by joule heating.

UR - https://www.scopus.com/pages/publications/79951757553

U2 - 10.1109/COMMAD.2010.5699751

DO - 10.1109/COMMAD.2010.5699751

M3 - Conference Paper

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 223

EP - 224

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Kim TH, Saleh MN, Kim S, Venkatachalam DK, Belay K, Burgess A et al. Resistance switching in polycrystalline NiO_x thin film. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 223-224. 5699751. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699751