Resistive switching behavior in HfO2 with Nb as an oxygen exchange layer

Sanjoy Kumar Nandi; Xinjun Liu; Shuai Li; Dinesh Kumar Venkatachalam; Kidane Belay; Robert Glen Elliman

doi:10.1109/COMMAD.2014.7038714

Resistive switching behavior in HfO₂ with Nb as an oxygen exchange layer

Sanjoy Kumar Nandi, Xinjun Liu, Shuai Li, Dinesh Kumar Venkatachalam, Kidane Belay, Robert Glen Elliman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

Abstract

The effect of Nb as an oxygen exchange layer in HfO₂ based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by comparing the performance of Pt/HfO₂/Pt and Pt/HfO₂/Nb ReRAM devices. The former are shown to exhibit only unipolar resistive switching, while the latter exhibit a range of switching modes including stable bipolar operation.

Original language	English
Title of host publication	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Editors	Mariusz Martyniuk, Lorenzo Faraone
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	290-293
Number of pages	4
ISBN (Electronic)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038714
Publication status	Published - 10 Feb 2014
Event	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014

Publication series

Name	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Conference

Conference	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14

Access to Document

10.1109/COMMAD.2014.7038714

Cite this

Nandi, S. K., Liu, X., Li, S., Venkatachalam, D. K., Belay, K., & Elliman, R. G. (2014). Resistive switching behavior in HfO₂ with Nb as an oxygen exchange layer. In M. Martyniuk, & L. Faraone (Eds.), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 (pp. 290-293). Article 7038714 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2014.7038714

Nandi, Sanjoy Kumar ; Liu, Xinjun ; Li, Shuai et al. / Resistive switching behavior in HfO₂ with Nb as an oxygen exchange layer. 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. editor / Mariusz Martyniuk ; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 290-293 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

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title = "Resistive switching behavior in HfO2 with Nb as an oxygen exchange layer",

abstract = "The effect of Nb as an oxygen exchange layer in HfO2 based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by comparing the performance of Pt/HfO2/Pt and Pt/HfO2/Nb ReRAM devices. The former are shown to exhibit only unipolar resistive switching, while the latter exhibit a range of switching modes including stable bipolar operation.",

keywords = "Hafnium Oxide, Niobium Oxide Complementary Switching, Resistive Switching",

author = "Nandi, {Sanjoy Kumar} and Xinjun Liu and Shuai Li and Venkatachalam, {Dinesh Kumar} and Kidane Belay and Elliman, {Robert Glen}",

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Nandi, SK, Liu, X, Li, S, Venkatachalam, DK, Belay, K & Elliman, RG 2014, Resistive switching behavior in HfO₂ with Nb as an oxygen exchange layer. in M Martyniuk & L Faraone (eds), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014., 7038714, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Institute of Electrical and Electronics Engineers Inc., pp. 290-293, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038714

Resistive switching behavior in HfO₂ with Nb as an oxygen exchange layer. / Nandi, Sanjoy Kumar; Liu, Xinjun; Li, Shuai et al.
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. ed. / Mariusz Martyniuk; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. p. 290-293 7038714 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The effect of Nb as an oxygen exchange layer in HfO2 based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by comparing the performance of Pt/HfO2/Pt and Pt/HfO2/Nb ReRAM devices. The former are shown to exhibit only unipolar resistive switching, while the latter exhibit a range of switching modes including stable bipolar operation.

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Nandi SK, Liu X, Li S, Venkatachalam DK, Belay K, Elliman RG. Resistive switching behavior in HfO₂ with Nb as an oxygen exchange layer. In Martyniuk M, Faraone L, editors, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 290-293. 7038714. (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). doi: 10.1109/COMMAD.2014.7038714