Resistive switching in high-k dielectrics for non-volatile memory applications

R. G. Elliman; M. N. Saleh; D. K. Venkatachalam; T. H. Kim; K. Belay; F. Karouta

doi:10.1109/COMMAD.2012.6472390

Resistive switching in high-k dielectrics for non-volatile memory applications

R. G. Elliman^*, M. N. Saleh, D. K. Venkatachalam, T. H. Kim, K. Belay, F. Karouta

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	121-122
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472390
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472390

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Elliman, R. G., Saleh, M. N., Venkatachalam, D. K., Kim, T. H., Belay, K., & Karouta, F. (2012). Resistive switching in high-k dielectrics for non-volatile memory applications. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 121-122). Article 6472390 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472390

@inproceedings{eb47688d53114794b4cc39030a467df0,

title = "Resistive switching in high-k dielectrics for non-volatile memory applications",

abstract = "We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.",

author = "Elliman, {R. G.} and Saleh, {M. N.} and Venkatachalam, {D. K.} and Kim, {T. H.} and K. Belay and F. Karouta",

year = "2012",

doi = "10.1109/COMMAD.2012.6472390",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "121--122",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Elliman, RG, Saleh, MN, Venkatachalam, DK, Kim, TH, Belay, K & Karouta, F 2012, Resistive switching in high-k dielectrics for non-volatile memory applications. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472390, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 121-122, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472390

Resistive switching in high-k dielectrics for non-volatile memory applications. / Elliman, R. G.; Saleh, M. N.; Venkatachalam, D. K. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 121-122 6472390 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Resistive switching in high-k dielectrics for non-volatile memory applications

AU - Elliman, R. G.

AU - Saleh, M. N.

AU - Venkatachalam, D. K.

AU - Kim, T. H.

AU - Belay, K.

AU - Karouta, F.

PY - 2012

Y1 - 2012

N2 - We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.

AB - We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.

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U2 - 10.1109/COMMAD.2012.6472390

DO - 10.1109/COMMAD.2012.6472390

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 121

EP - 122

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Elliman RG, Saleh MN, Venkatachalam DK, Kim TH, Belay K, Karouta F. Resistive switching in high-k dielectrics for non-volatile memory applications. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 121-122. 6472390. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472390

Resistive switching in high-k dielectrics for non-volatile memory applications

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