Resistive switching memories in MoS2 nanosphere assemblies

Xiao Yong Xu; Zong You Yin; Chun Xiang Xu; Jun Dai; Jing Guo Hu

doi:10.1063/1.4862755

Resistive switching memories in MoS₂ nanosphere assemblies

Xiao Yong Xu, Zong You Yin, Chun Xiang Xu, Jun Dai, Jing Guo Hu

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS₂ nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10 ⁴), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.

Original language	English
Article number	033504
Journal	Applied Physics Letters
Volume	104
Issue number	3
DOIs	https://doi.org/10.1063/1.4862755
Publication status	Published - 20 Jan 2014
Externally published	Yes

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10.1063/1.4862755

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title = "Resistive switching memories in MoS2 nanosphere assemblies",

abstract = "A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10 4), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.",

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AU - Xu, Xiao Yong

AU - Yin, Zong You

AU - Xu, Chun Xiang

AU - Dai, Jun

AU - Hu, Jing Guo

PY - 2014/1/20

Y1 - 2014/1/20

N2 - A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10 4), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.

AB - A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10 4), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.

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Resistive switching memories in MoS₂ nanosphere assemblies

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