Response to "comment on 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation'" [Appl. Phys. Lett. 80, 1492 (2002)]

P. Pellegrino; P. Léveque; H. Kortegaard-Nielsen; J. Wong-Leung; C. Jagadish; B. G. Svensson

doi:10.1063/1.1455141

Response to "comment on 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation'" [Appl. Phys. Lett. 80, 1492 (2002)]

P. Pellegrino^*, P. Léveque, H. Kortegaard-Nielsen, J. Wong-Leung, C. Jagadish, B. G. Svensson

^*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

1 Citation (Scopus)

Original language	English
Pages (from-to)	1494-1495
Number of pages	2
Journal	Applied Physics Letters
Volume	80
Issue number	8
DOIs	https://doi.org/10.1063/1.1455141
Publication status	Published - 25 Feb 2002

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10.1063/1.1455141

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author = "P. Pellegrino and P. L{\'e}veque and H. Kortegaard-Nielsen and J. Wong-Leung and C. Jagadish and Svensson, {B. G.}",

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T1 - Response to "comment on 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon

T2 - Experimental observation'" [Appl. Phys. Lett. 80, 1492 (2002)]

AU - Pellegrino, P.

AU - Léveque, P.

AU - Kortegaard-Nielsen, H.

AU - Wong-Leung, J.

AU - Jagadish, C.

AU - Svensson, B. G.

PY - 2002/2/25

Y1 - 2002/2/25

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U2 - 10.1063/1.1455141

DO - 10.1063/1.1455141

M3 - Letter

SN - 0003-6951

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EP - 1495

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Response to "comment on 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation'" [Appl. Phys. Lett. 80, 1492 (2002)]

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