Reversibility and stability of ZnO-Sb2Te3 nanocomposite films for phase change memory applications

Guoxiang Wang; Yimin Chen; Xiang Shen; Junjian Li; Rongping Wang; Yegang Lu; Shixun Dai; Tiefeng Xu; Qiuhua Nie

doi:10.1021/am501345x

Reversibility and stability of ZnO-Sb₂Te₃ nanocomposite films for phase change memory applications

Guoxiang Wang^*, Yimin Chen, Xiang Shen, Junjian Li, Rongping Wang, Yegang Lu, Shixun Dai, Tiefeng Xu, Qiuhua Nie

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

(ZnO)_x(Sb₂Te₃)_1-x materials with different ZnO contents have been systemically studied with an aim of finding the most suitable composition for phase change memory applications. It was found that ZnO-doping could improve thermal stability and electrical behavior of Sb₂Te₃ film. Sb₂Te₃-rich nanocrystals, surrounded by ZnO-rich amorphous phases, were observed in annealed ZnO-doped Sb₂Te₃ composite films, and the segregated domains exhibited a relatively uniform distribution. The ZnO-doped Sb₂Te₃ composite films, especially with 5.2 at% ZnO concentration were found to have higher crystallization temperature, higher crystalline resistance, and faster crystallization speed in comparison with Ge₂Sb₂Te₅. A reversible repetitive optical switching behavior can be observed in (ZnO)_5.2(Sb₂Te ₃)_94.8, confirming that the ZnO doping is responsible for a fast switching and the compound is stable with cycling. Therefore, it is promising for the applications in phase change memory devices.

Original language	English
Pages (from-to)	8488-8496
Number of pages	9
Journal	ACS applied materials & interfaces
Volume	6
Issue number	11
DOIs	https://doi.org/10.1021/am501345x
Publication status	Published - 11 Jun 2014

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title = "Reversibility and stability of ZnO-Sb2Te3 nanocomposite films for phase change memory applications",

abstract = "(ZnO)x(Sb2Te3)1-x materials with different ZnO contents have been systemically studied with an aim of finding the most suitable composition for phase change memory applications. It was found that ZnO-doping could improve thermal stability and electrical behavior of Sb2Te3 film. Sb2Te3-rich nanocrystals, surrounded by ZnO-rich amorphous phases, were observed in annealed ZnO-doped Sb2Te3 composite films, and the segregated domains exhibited a relatively uniform distribution. The ZnO-doped Sb2Te3 composite films, especially with 5.2 at% ZnO concentration were found to have higher crystallization temperature, higher crystalline resistance, and faster crystallization speed in comparison with Ge2Sb2Te5. A reversible repetitive optical switching behavior can be observed in (ZnO)5.2(Sb2Te 3)94.8, confirming that the ZnO doping is responsible for a fast switching and the compound is stable with cycling. Therefore, it is promising for the applications in phase change memory devices.",

keywords = "crystallization, nanocomposite, optical reflectivity, phase change, thin films",

author = "Guoxiang Wang and Yimin Chen and Xiang Shen and Junjian Li and Rongping Wang and Yegang Lu and Shixun Dai and Tiefeng Xu and Qiuhua Nie",

year = "2014",

month = jun,

day = "11",

doi = "10.1021/am501345x",

language = "English",

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T1 - Reversibility and stability of ZnO-Sb2Te3 nanocomposite films for phase change memory applications

AU - Wang, Guoxiang

AU - Chen, Yimin

AU - Shen, Xiang

AU - Li, Junjian

AU - Wang, Rongping

AU - Lu, Yegang

AU - Dai, Shixun

AU - Xu, Tiefeng

AU - Nie, Qiuhua

PY - 2014/6/11

Y1 - 2014/6/11

N2 - (ZnO)x(Sb2Te3)1-x materials with different ZnO contents have been systemically studied with an aim of finding the most suitable composition for phase change memory applications. It was found that ZnO-doping could improve thermal stability and electrical behavior of Sb2Te3 film. Sb2Te3-rich nanocrystals, surrounded by ZnO-rich amorphous phases, were observed in annealed ZnO-doped Sb2Te3 composite films, and the segregated domains exhibited a relatively uniform distribution. The ZnO-doped Sb2Te3 composite films, especially with 5.2 at% ZnO concentration were found to have higher crystallization temperature, higher crystalline resistance, and faster crystallization speed in comparison with Ge2Sb2Te5. A reversible repetitive optical switching behavior can be observed in (ZnO)5.2(Sb2Te 3)94.8, confirming that the ZnO doping is responsible for a fast switching and the compound is stable with cycling. Therefore, it is promising for the applications in phase change memory devices.

AB - (ZnO)x(Sb2Te3)1-x materials with different ZnO contents have been systemically studied with an aim of finding the most suitable composition for phase change memory applications. It was found that ZnO-doping could improve thermal stability and electrical behavior of Sb2Te3 film. Sb2Te3-rich nanocrystals, surrounded by ZnO-rich amorphous phases, were observed in annealed ZnO-doped Sb2Te3 composite films, and the segregated domains exhibited a relatively uniform distribution. The ZnO-doped Sb2Te3 composite films, especially with 5.2 at% ZnO concentration were found to have higher crystallization temperature, higher crystalline resistance, and faster crystallization speed in comparison with Ge2Sb2Te5. A reversible repetitive optical switching behavior can be observed in (ZnO)5.2(Sb2Te 3)94.8, confirming that the ZnO doping is responsible for a fast switching and the compound is stable with cycling. Therefore, it is promising for the applications in phase change memory devices.

KW - crystallization

KW - nanocomposite

KW - optical reflectivity

KW - phase change

KW - thin films

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U2 - 10.1021/am501345x

DO - 10.1021/am501345x

M3 - Article

SN - 1944-8244

VL - 6

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EP - 8496

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 11

ER -

Reversibility and stability of ZnO-Sb₂Te₃ nanocomposite films for phase change memory applications

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