Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption

Chia Hung Wu; Chi Wen Chen; Hung Jung Shen; Hsiang Yu Chuang; Hark Hoe Tan; Chennupati Jagadish; Tien Chang Lu; Satoshi Ishii; Kuo Ping Chen

doi:10.1002/advs.202412340

Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption

Chia Hung Wu, Chi Wen Chen, Hung Jung Shen, Hsiang Yu Chuang, Hark Hoe Tan, Chennupati Jagadish, Tien Chang Lu, Satoshi Ishii, Kuo Ping Chen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III-V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra-high optical gain within the 1D cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties at room temperature. The InP NW lasers can achieve repetitive switching between photoluminescence (PL) and lasing with an extinction ratio of 22-fold by applying a gate voltage of 3 V using ionic liquid (IL) as a dielectric layer. IL brings forth ultra-high capacitance due to the nanometer-wide electric double layer (EDL) between interfaces, mapping out gating efficiency of ≈100-fold compared to the conventional bottom gate configurations. This IL-embedded nanolaser device can be a promising platform for the advanced integrated nanophotonic system.

Original language	English
Article number	2412340
Journal	Advanced Science
Volume	12
Issue number	8
DOIs	https://doi.org/10.1002/advs.202412340
Publication status	Published - 24 Feb 2025

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title = "Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption",

abstract = "Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III-V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra-high optical gain within the 1D cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties at room temperature. The InP NW lasers can achieve repetitive switching between photoluminescence (PL) and lasing with an extinction ratio of 22-fold by applying a gate voltage of 3 V using ionic liquid (IL) as a dielectric layer. IL brings forth ultra-high capacitance due to the nanometer-wide electric double layer (EDL) between interfaces, mapping out gating efficiency of ≈100-fold compared to the conventional bottom gate configurations. This IL-embedded nanolaser device can be a promising platform for the advanced integrated nanophotonic system.",

keywords = "carrier modulation, flexible substrate, InP nanolasers, ionic liquid",

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AU - Wu, Chia Hung

AU - Chen, Chi Wen

AU - Shen, Hung Jung

AU - Chuang, Hsiang Yu

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

AU - Lu, Tien Chang

AU - Ishii, Satoshi

AU - Chen, Kuo Ping

PY - 2025/2/24

Y1 - 2025/2/24

N2 - Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III-V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra-high optical gain within the 1D cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties at room temperature. The InP NW lasers can achieve repetitive switching between photoluminescence (PL) and lasing with an extinction ratio of 22-fold by applying a gate voltage of 3 V using ionic liquid (IL) as a dielectric layer. IL brings forth ultra-high capacitance due to the nanometer-wide electric double layer (EDL) between interfaces, mapping out gating efficiency of ≈100-fold compared to the conventional bottom gate configurations. This IL-embedded nanolaser device can be a promising platform for the advanced integrated nanophotonic system.

AB - Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III-V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra-high optical gain within the 1D cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties at room temperature. The InP NW lasers can achieve repetitive switching between photoluminescence (PL) and lasing with an extinction ratio of 22-fold by applying a gate voltage of 3 V using ionic liquid (IL) as a dielectric layer. IL brings forth ultra-high capacitance due to the nanometer-wide electric double layer (EDL) between interfaces, mapping out gating efficiency of ≈100-fold compared to the conventional bottom gate configurations. This IL-embedded nanolaser device can be a promising platform for the advanced integrated nanophotonic system.

KW - carrier modulation

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KW - InP nanolasers

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Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption

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