Role of implantation-induced defects on the response time of semiconductor saturable absorbers

H. H. Tan; C. Jagadish; M. J. Lederer; B. Luther-Davies; J. Zou; D. J.H. Cockayne; M. Haiml; U. Siegner; U. Keller

doi:10.1063/1.124718

Role of implantation-induced defects on the response time of semiconductor saturable absorbers

H. H. Tan^*, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J.H. Cockayne, M. Haiml, U. Siegner, U. Keller

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

To shorten the response times of GaAs-based saturable absorber structures, arsenic ion implantation with thermal annealing was employed. Results showed that both the concentration and type of residual defects determines the ultimate shortening of the carrier lifetime. To eliminate amorphization, poor recrystallization and polycrystalline layers after annealing, high implantation doses should be avoided since the response time is increased under these conditions.

Original language	English
Pages (from-to)	1437-1439
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	10
DOIs	https://doi.org/10.1063/1.124718
Publication status	Published - 6 Sept 1999

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abstract = "To shorten the response times of GaAs-based saturable absorber structures, arsenic ion implantation with thermal annealing was employed. Results showed that both the concentration and type of residual defects determines the ultimate shortening of the carrier lifetime. To eliminate amorphization, poor recrystallization and polycrystalline layers after annealing, high implantation doses should be avoided since the response time is increased under these conditions.",

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AU - Tan, H. H.

AU - Jagadish, C.

AU - Lederer, M. J.

AU - Luther-Davies, B.

AU - Zou, J.

AU - Cockayne, D. J.H.

AU - Haiml, M.

AU - Siegner, U.

AU - Keller, U.

PY - 1999/9/6

Y1 - 1999/9/6

N2 - To shorten the response times of GaAs-based saturable absorber structures, arsenic ion implantation with thermal annealing was employed. Results showed that both the concentration and type of residual defects determines the ultimate shortening of the carrier lifetime. To eliminate amorphization, poor recrystallization and polycrystalline layers after annealing, high implantation doses should be avoided since the response time is increased under these conditions.

AB - To shorten the response times of GaAs-based saturable absorber structures, arsenic ion implantation with thermal annealing was employed. Results showed that both the concentration and type of residual defects determines the ultimate shortening of the carrier lifetime. To eliminate amorphization, poor recrystallization and polycrystalline layers after annealing, high implantation doses should be avoided since the response time is increased under these conditions.

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DO - 10.1063/1.124718

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VL - 75

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Role of implantation-induced defects on the response time of semiconductor saturable absorbers

Abstract

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