Abstract
Good-quality silicon dioxide films have been deposited at low temperature (≤200 °C) using continuous and pulsed oxygen/silane plasmas coupled in a high-density, low-pressure helicon reactor. Although the total ion flux determines many of the structural properties of the deposited oxide, we have found that silicon-containing ions contribute to the film growth (up to 50 %) and appear to be responsible for the measured compressive stress.
Original language | English |
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Pages (from-to) | 401-405 |
Number of pages | 5 |
Journal | Pure and Applied Chemistry |
Volume | 74 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2002 |