Role of nucleation sites on the formation of nanoporous Ge

B. R. Yates*, B. L. Darby, R. G. Elliman, K. S. Jones

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    13 Citations (Scopus)

    Abstract

    The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90° from incidence at 300keV with fluences ranging from 3.0×1015 to 3.0×1016 Ge +/cm2. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

    Original languageEnglish
    Article number131907
    JournalApplied Physics Letters
    Volume101
    Issue number13
    DOIs
    Publication statusPublished - 24 Sept 2012

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