Role of stress on impurity free disordering of quantum dots

S. Barik; L. Fu; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2008.4802131

Role of stress on impurity free disordering of quantum dots

S. Barik^*, L. Fu, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We discuss the role of stress on diffusion of vacancies and interstitials theoretically. The stresses induced by SiO₂ and TiO₂ dielectric layers on InP and GaAs based QD structures are calculated and some reported quantum dot intermixing results are explained by a stress-induced forced interdiffusion model.

Original language	English
Title of host publication	Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Pages	221-224
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2008.4802131
Publication status	Published - 2008
Event	2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia Duration: 28 Jul 2008 → 1 Aug 2008

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Country/Territory	Australia
City	Sydney, NSW
Period	28/07/08 → 1/08/08

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10.1109/COMMAD.2008.4802131

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Barik, S., Fu, L., Tan, H. H., & Jagadish, C. (2008). Role of stress on impurity free disordering of quantum dots. In Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 (pp. 221-224). Article 4802131 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2008.4802131

@inproceedings{5f63d45c930d4ac59fb812226bba3830,

title = "Role of stress on impurity free disordering of quantum dots",

abstract = "We discuss the role of stress on diffusion of vacancies and interstitials theoretically. The stresses induced by SiO2 and TiO2 dielectric layers on InP and GaAs based QD structures are calculated and some reported quantum dot intermixing results are explained by a stress-induced forced interdiffusion model.",

keywords = "Impurity free disordering, Quantum dot intermixing, Stress",

author = "S. Barik and L. Fu and Tan, {H. H.} and C. Jagadish",

year = "2008",

doi = "10.1109/COMMAD.2008.4802131",

language = "English",

isbn = "9781424427178",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "221--224",

booktitle = "Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08",

note = "2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 ; Conference date: 28-07-2008 Through 01-08-2008",

}

Barik, S, Fu, L , Tan, HH & Jagadish, C 2008, Role of stress on impurity free disordering of quantum dots. in Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08., 4802131, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 221-224, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Sydney, NSW, Australia, 28/07/08. https://doi.org/10.1109/COMMAD.2008.4802131

Role of stress on impurity free disordering of quantum dots. / Barik, S.; Fu, L.; Tan, H. H. et al.
Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 221-224 4802131 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Role of stress on impurity free disordering of quantum dots

AU - Barik, S.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2008

Y1 - 2008

N2 - We discuss the role of stress on diffusion of vacancies and interstitials theoretically. The stresses induced by SiO2 and TiO2 dielectric layers on InP and GaAs based QD structures are calculated and some reported quantum dot intermixing results are explained by a stress-induced forced interdiffusion model.

AB - We discuss the role of stress on diffusion of vacancies and interstitials theoretically. The stresses induced by SiO2 and TiO2 dielectric layers on InP and GaAs based QD structures are calculated and some reported quantum dot intermixing results are explained by a stress-induced forced interdiffusion model.

KW - Impurity free disordering

KW - Quantum dot intermixing

KW - Stress

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U2 - 10.1109/COMMAD.2008.4802131

DO - 10.1109/COMMAD.2008.4802131

M3 - Conference contribution

SN - 9781424427178

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 221

EP - 224

BT - Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08

T2 - 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08

Y2 - 28 July 2008 through 1 August 2008

ER -

Role of stress on impurity free disordering of quantum dots

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