Room-temperature preperation of InGaAsN quantum dot lasers grown by MOCVD

Q. Gao; M. Buda; H. H. Tan; C. Jagadish

doi:10.1149/1.1848293

Room-temperature preperation of InGaAsN quantum dot lasers grown by MOCVD

Q. Gao^*, M. Buda, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

An InGaAsN single-layer quantum dot (QD) laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at room temperature. The evidence for QD-related absorption was obtained from the comparison of photocurrent spectra between a reference InGaAs QW and the InGaAsN QD structures.

Original language	English
Pages (from-to)	G57-G59
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	2
DOIs	https://doi.org/10.1149/1.1848293
Publication status	Published - 2005

Access to Document

10.1149/1.1848293

Cite this

@article{5776bf636b01445bb8a0805f1d40c009,

title = "Room-temperature preperation of InGaAsN quantum dot lasers grown by MOCVD",

abstract = "An InGaAsN single-layer quantum dot (QD) laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at room temperature. The evidence for QD-related absorption was obtained from the comparison of photocurrent spectra between a reference InGaAs QW and the InGaAsN QD structures.",

author = "Q. Gao and M. Buda and Tan, {H. H.} and C. Jagadish",

year = "2005",

doi = "10.1149/1.1848293",

language = "English",

volume = "8",

pages = "G57--G59",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "2",

}

TY - JOUR

T1 - Room-temperature preperation of InGaAsN quantum dot lasers grown by MOCVD

AU - Gao, Q.

AU - Buda, M.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2005

Y1 - 2005

N2 - An InGaAsN single-layer quantum dot (QD) laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at room temperature. The evidence for QD-related absorption was obtained from the comparison of photocurrent spectra between a reference InGaAs QW and the InGaAsN QD structures.

AB - An InGaAsN single-layer quantum dot (QD) laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at room temperature. The evidence for QD-related absorption was obtained from the comparison of photocurrent spectra between a reference InGaAs QW and the InGaAsN QD structures.

UR - http://www.scopus.com/inward/record.url?scp=13444253883&partnerID=8YFLogxK

U2 - 10.1149/1.1848293

DO - 10.1149/1.1848293

M3 - Article

SN - 1099-0062

VL - 8

SP - G57-G59

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Room-temperature preperation of InGaAsN quantum dot lasers grown by MOCVD

Abstract

Access to Document

Other files and links

Fingerprint

Cite this