Room temperature sensing of ozone by transparent p-type semiconductor CuAlO2

X. G. Zheng; K. Taniguchi; A. Takahashi; Y. Liu; C. N. Xu

doi:10.1063/1.1784888

Room temperature sensing of ozone by transparent p-type semiconductor CuAlO₂

X. G. Zheng^*, K. Taniguchi, A. Takahashi, Y. Liu, C. N. Xu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

115 Citations (Scopus)

Abstract

The room temperature sensing of ozone by transparent p-type semiconductor CuAlO₂ was discussed. A transparent p-type semiconductor, CUAlO ₂, shows selective and reversible response to ozone gas at room temperature. This materials potential could be exploited using a combination of the p-type transparent CuAlO₂ with an existing n-type ozone sensing material In₂O₃ to fabricate hybrid ozone sensing devices and environmental optoelectronic devices. It was observed that transparent p-type semiconductor, CuAlO₂ has an optical band gap of 3.5 eV.

Original language	English
Pages (from-to)	1728-1729
Number of pages	2
Journal	Applied Physics Letters
Volume	85
Issue number	10
DOIs	https://doi.org/10.1063/1.1784888
Publication status	Published - 6 Sept 2004
Externally published	Yes

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abstract = "The room temperature sensing of ozone by transparent p-type semiconductor CuAlO2 was discussed. A transparent p-type semiconductor, CUAlO 2, shows selective and reversible response to ozone gas at room temperature. This materials potential could be exploited using a combination of the p-type transparent CuAlO2 with an existing n-type ozone sensing material In2O3 to fabricate hybrid ozone sensing devices and environmental optoelectronic devices. It was observed that transparent p-type semiconductor, CuAlO2 has an optical band gap of 3.5 eV.",

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AU - Zheng, X. G.

AU - Taniguchi, K.

AU - Takahashi, A.

AU - Liu, Y.

AU - Xu, C. N.

PY - 2004/9/6

Y1 - 2004/9/6

N2 - The room temperature sensing of ozone by transparent p-type semiconductor CuAlO2 was discussed. A transparent p-type semiconductor, CUAlO 2, shows selective and reversible response to ozone gas at room temperature. This materials potential could be exploited using a combination of the p-type transparent CuAlO2 with an existing n-type ozone sensing material In2O3 to fabricate hybrid ozone sensing devices and environmental optoelectronic devices. It was observed that transparent p-type semiconductor, CuAlO2 has an optical band gap of 3.5 eV.

AB - The room temperature sensing of ozone by transparent p-type semiconductor CuAlO2 was discussed. A transparent p-type semiconductor, CUAlO 2, shows selective and reversible response to ozone gas at room temperature. This materials potential could be exploited using a combination of the p-type transparent CuAlO2 with an existing n-type ozone sensing material In2O3 to fabricate hybrid ozone sensing devices and environmental optoelectronic devices. It was observed that transparent p-type semiconductor, CuAlO2 has an optical band gap of 3.5 eV.

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U2 - 10.1063/1.1784888

DO - 10.1063/1.1784888

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VL - 85

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Room temperature sensing of ozone by transparent p-type semiconductor CuAlO2

Abstract

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Room temperature sensing of ozone by transparent p-type semiconductor CuAlO₂