Sb-rich Zn-Sb-Te phase-change materials: A candidate for the trade-off between crystallization speed and data retention

Yimin Chen; Guoxiang Wang; Jun Li; Xiang Shen; Tiefeng Xu; Rongping Wang; Yegang Lu; Xunsi Wang; Shixun Dai; Qiuhua Nie

doi:10.7567/APEX.7.105801

Sb-rich Zn-Sb-Te phase-change materials: A candidate for the trade-off between crystallization speed and data retention

Yimin Chen, Guoxiang Wang, Jun Li, Xiang Shen^*, Tiefeng Xu, Rongping Wang, Yegang Lu, Xunsi Wang, Shixun Dai, Qiuhua Nie

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We explored the structural and physical properties of Sb-rich Zn-Sb-Te films in order to combine the good thermal stability of ZnSb with the high crystallization speed of Sb₂Te. The films generally exhibit two different crystallization characteristics described as follows: amorphous → Sb₂Te crystalline phase if the Zn content in the film is less than ∼10 at. % and amorphous → Sb crystalline phase if the Zn content is more than ∼10 at. %. Among the films, the Zn_28.62Sb_53.69Te_17.69 film was found to show the highest crystallization temperature (∼255°C), best 10 year data retention (∼165.9°C), and shortest crystallization time of ∼58 ns at 70 mW with a stable rhombohedral Sb phase; thus, it is considered promising for phase-change memory applications.

Original language	English
Article number	105801
Journal	Applied Physics Express
Volume	7
Issue number	10
DOIs	https://doi.org/10.7567/APEX.7.105801
Publication status	Published - 1 Oct 2014

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title = "Sb-rich Zn-Sb-Te phase-change materials: A candidate for the trade-off between crystallization speed and data retention",

abstract = "We explored the structural and physical properties of Sb-rich Zn-Sb-Te films in order to combine the good thermal stability of ZnSb with the high crystallization speed of Sb2Te. The films generally exhibit two different crystallization characteristics described as follows: amorphous → Sb2Te crystalline phase if the Zn content in the film is less than ∼10 at. % and amorphous → Sb crystalline phase if the Zn content is more than ∼10 at. %. Among the films, the Zn28.62Sb53.69Te17.69 film was found to show the highest crystallization temperature (∼255°C), best 10 year data retention (∼165.9°C), and shortest crystallization time of ∼58 ns at 70 mW with a stable rhombohedral Sb phase; thus, it is considered promising for phase-change memory applications.",

author = "Yimin Chen and Guoxiang Wang and Jun Li and Xiang Shen and Tiefeng Xu and Rongping Wang and Yegang Lu and Xunsi Wang and Shixun Dai and Qiuhua Nie",

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T1 - Sb-rich Zn-Sb-Te phase-change materials

T2 - A candidate for the trade-off between crystallization speed and data retention

AU - Chen, Yimin

AU - Wang, Guoxiang

AU - Li, Jun

AU - Shen, Xiang

AU - Xu, Tiefeng

AU - Wang, Rongping

AU - Lu, Yegang

AU - Wang, Xunsi

AU - Dai, Shixun

AU - Nie, Qiuhua

PY - 2014/10/1

Y1 - 2014/10/1

N2 - We explored the structural and physical properties of Sb-rich Zn-Sb-Te films in order to combine the good thermal stability of ZnSb with the high crystallization speed of Sb2Te. The films generally exhibit two different crystallization characteristics described as follows: amorphous → Sb2Te crystalline phase if the Zn content in the film is less than ∼10 at. % and amorphous → Sb crystalline phase if the Zn content is more than ∼10 at. %. Among the films, the Zn28.62Sb53.69Te17.69 film was found to show the highest crystallization temperature (∼255°C), best 10 year data retention (∼165.9°C), and shortest crystallization time of ∼58 ns at 70 mW with a stable rhombohedral Sb phase; thus, it is considered promising for phase-change memory applications.

AB - We explored the structural and physical properties of Sb-rich Zn-Sb-Te films in order to combine the good thermal stability of ZnSb with the high crystallization speed of Sb2Te. The films generally exhibit two different crystallization characteristics described as follows: amorphous → Sb2Te crystalline phase if the Zn content in the film is less than ∼10 at. % and amorphous → Sb crystalline phase if the Zn content is more than ∼10 at. %. Among the films, the Zn28.62Sb53.69Te17.69 film was found to show the highest crystallization temperature (∼255°C), best 10 year data retention (∼165.9°C), and shortest crystallization time of ∼58 ns at 70 mW with a stable rhombohedral Sb phase; thus, it is considered promising for phase-change memory applications.

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JO - Applied Physics Express

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ER -

Sb-rich Zn-Sb-Te phase-change materials: A candidate for the trade-off between crystallization speed and data retention

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