Scanning ion deep level transient spectroscopy

J. S. Laird; R. A. Bardos; C. Jagadish; D. N. Jamieson; G. J.F. Legge

doi:10.1016/S0168-583X(99)00329-8

Scanning ion deep level transient spectroscopy

J. S. Laird^*, R. A. Bardos, C. Jagadish, D. N. Jamieson, G. J.F. Legge

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. The technique known here as Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is analogous to the bulk technique Deep Level Transient Spectroscopy (DLTS). In SIDLTS, the electron-hole (e-h) plasma induced by the MeV ion provides the trap-filling pulse. A simple theoretical framework for sensitivity is discussed as is the system developed to achieve it. A comparison of DLTS and SIDLTS on an implanted Au-Si Schottky barrier is made, including quantitative estimations of the trap activation energies and sensitivity.

Original language	English
Pages (from-to)	464-469
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	158
Issue number	1
DOIs	https://doi.org/10.1016/S0168-583X(99)00329-8
Publication status	Published - 2 Sept 1999
Event	Proceedings of the 1998 6th International Conference on Nuclear Microprobe Technology and Applications (ICNMTA) - Cape Town, S Afr Duration: 11 Oct 1998 → 16 Oct 1998

Access to Document

10.1016/S0168-583X(99)00329-8

Cite this

@article{78e54078611d4dd39e8f8e3b28e5352d,

title = "Scanning ion deep level transient spectroscopy",

abstract = "We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. The technique known here as Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is analogous to the bulk technique Deep Level Transient Spectroscopy (DLTS). In SIDLTS, the electron-hole (e-h) plasma induced by the MeV ion provides the trap-filling pulse. A simple theoretical framework for sensitivity is discussed as is the system developed to achieve it. A comparison of DLTS and SIDLTS on an implanted Au-Si Schottky barrier is made, including quantitative estimations of the trap activation energies and sensitivity.",

author = "Laird, \{J. S.\} and Bardos, \{R. A.\} and C. Jagadish and Jamieson, \{D. N.\} and Legge, \{G. J.F.\}",

year = "1999",

month = sep,

day = "2",

doi = "10.1016/S0168-583X(99)00329-8",

language = "English",

volume = "158",

pages = "464--469",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of the 1998 6th International Conference on Nuclear Microprobe Technology and Applications (ICNMTA) ; Conference date: 11-10-1998 Through 16-10-1998",

}

TY - JOUR

T1 - Scanning ion deep level transient spectroscopy

AU - Laird, J. S.

AU - Bardos, R. A.

AU - Jagadish, C.

AU - Jamieson, D. N.

AU - Legge, G. J.F.

PY - 1999/9/2

Y1 - 1999/9/2

N2 - We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. The technique known here as Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is analogous to the bulk technique Deep Level Transient Spectroscopy (DLTS). In SIDLTS, the electron-hole (e-h) plasma induced by the MeV ion provides the trap-filling pulse. A simple theoretical framework for sensitivity is discussed as is the system developed to achieve it. A comparison of DLTS and SIDLTS on an implanted Au-Si Schottky barrier is made, including quantitative estimations of the trap activation energies and sensitivity.

AB - We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. The technique known here as Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is analogous to the bulk technique Deep Level Transient Spectroscopy (DLTS). In SIDLTS, the electron-hole (e-h) plasma induced by the MeV ion provides the trap-filling pulse. A simple theoretical framework for sensitivity is discussed as is the system developed to achieve it. A comparison of DLTS and SIDLTS on an implanted Au-Si Schottky barrier is made, including quantitative estimations of the trap activation energies and sensitivity.

UR - https://www.scopus.com/pages/publications/0033339978

UR - https://www.scimagojr.com/journalsearch.php?q=29068&tip=sid&clean=0

U2 - 10.1016/S0168-583X(99)00329-8

DO - 10.1016/S0168-583X(99)00329-8

M3 - Article

SN - 0168-583X

VL - 158

SP - 464

EP - 469

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1

T2 - Proceedings of the 1998 6th International Conference on Nuclear Microprobe Technology and Applications (ICNMTA)

Y2 - 11 October 1998 through 16 October 1998

ER -

Scanning ion deep level transient spectroscopy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this