Abstract
B implants of 1 keV, 1× 1015 at. cm-2 into 125-nm -wide, free-standing Si nanostructures have been characterized using scanning spreading resistance microscopy following a 0 s, 1050 °C anneal in N2. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of ion-implantation-induced excess Si self-interstitials.
Original language | English |
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Pages (from-to) | 76-79 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 23 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2005 |