Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures

S. M. Kluth*, D. Álvarez, St Trellenkamp, J. Moers, S. Mantl, J. Kretz, W. Vandervorst

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    17 Citations (Scopus)

    Abstract

    B implants of 1 keV, 1× 1015 at. cm-2 into 125-nm -wide, free-standing Si nanostructures have been characterized using scanning spreading resistance microscopy following a 0 s, 1050 °C anneal in N2. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of ion-implantation-induced excess Si self-interstitials.

    Original languageEnglish
    Pages (from-to)76-79
    Number of pages4
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume23
    Issue number1
    DOIs
    Publication statusPublished - 2005

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