Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures

S. M. Kluth; D. Álvarez; St Trellenkamp; J. Moers; S. Mantl; J. Kretz; W. Vandervorst

doi:10.1116/1.1839898

Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures

S. M. Kluth^*, D. Álvarez, St Trellenkamp, J. Moers, S. Mantl, J. Kretz, W. Vandervorst

^*Corresponding author for this work

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17 Citations (Scopus)

Abstract

B implants of 1 keV, 1× 1015 at. cm-2 into 125-nm -wide, free-standing Si nanostructures have been characterized using scanning spreading resistance microscopy following a 0 s, 1050 °C anneal in N2. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of ion-implantation-induced excess Si self-interstitials.

Original language	English
Pages (from-to)	76-79
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	1
DOIs	https://doi.org/10.1116/1.1839898
Publication status	Published - 2005

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10.1116/1.1839898

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title = "Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures",

abstract = "B implants of 1 keV, 1× 1015 at. cm-2 into 125-nm -wide, free-standing Si nanostructures have been characterized using scanning spreading resistance microscopy following a 0 s, 1050 °C anneal in N2. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of ion-implantation-induced excess Si self-interstitials.",

author = "Kluth, \{S. M.\} and D. {\'A}lvarez and St Trellenkamp and J. Moers and S. Mantl and J. Kretz and W. Vandervorst",

year = "2005",

doi = "10.1116/1.1839898",

language = "English",

volume = "23",

pages = "76--79",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1",

}

Kluth, SM, Álvarez, D, Trellenkamp, S, Moers, J, Mantl, S, Kretz, J & Vandervorst, W 2005, 'Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 23, no. 1, pp. 76-79. https://doi.org/10.1116/1.1839898

Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures. / Kluth, S. M.; Álvarez, D.; Trellenkamp, St et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 1, 2005, p. 76-79.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures

AU - Kluth, S. M.

AU - Álvarez, D.

AU - Trellenkamp, St

AU - Moers, J.

AU - Mantl, S.

AU - Kretz, J.

AU - Vandervorst, W.

PY - 2005

Y1 - 2005

N2 - B implants of 1 keV, 1× 1015 at. cm-2 into 125-nm -wide, free-standing Si nanostructures have been characterized using scanning spreading resistance microscopy following a 0 s, 1050 °C anneal in N2. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of ion-implantation-induced excess Si self-interstitials.

AB - B implants of 1 keV, 1× 1015 at. cm-2 into 125-nm -wide, free-standing Si nanostructures have been characterized using scanning spreading resistance microscopy following a 0 s, 1050 °C anneal in N2. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of ion-implantation-induced excess Si self-interstitials.

UR - https://www.scopus.com/pages/publications/31144447590

U2 - 10.1116/1.1839898

DO - 10.1116/1.1839898

M3 - Article

SN - 1071-1023

VL - 23

SP - 76

EP - 79

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures

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